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See Technical Specifications

FCH041N65F-F085 +BOM

Designed for harsh automotive environments with a high operating temperature range

Manufacturer:

onsemi
Mfr.Part #:

FCH041N65F-F085
Datasheet:

FCH041N65F-F085 Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

340CK
MSL Type:

NA
MSL Temp (°C):

0
EDA/CAD Models:

Request Free CAD Models for FCH041N65F-F085

FCH041N65F-F085 Information

General Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverserecovery performance can remove additional component andimprove system reliability

Key Features

Typical R_DS(on) = 34 mΩ at V_GS = 10 V, I_D = 38 A
Typical Q_g(tot) = 234 nC at V_GS = 10V, I_D = 38 A
UIS Capability
Qualified to AEC Q101
RoHS Compliant

Application

Automotive On Board Charger
Automotive DC/DC converter for HEV

Specifications

Status	Active, Not Rec	Compliance	PbAHP
Case Outline	340CK	MSL Type	NA
MSL Temp (°C)	0	Container Type	TUBE
Container Qty.	450	ON Target	Y
Channel Polarity	N-Channel	Configuration	Single
V(BR)DSS Min (V)	650	VGS Max (V)	±20
VGS(th) Max (V)	5	ID Max (A)	76
PD Max (W)	595	RDS(on) Max @ VGS = 10 V (mΩ)	41
Qg Typ @ VGS = 10 V (nC)	234	Ciss Typ (pF)	10200
Pricing ($/Unit)	$11.7309Sample	Package/Case	TO-247-3