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See Technical Specifications

EMB2T2R +BOM

PNP+PNP configuration ideal for logic gate applications.

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

EMB2T2R
Datasheet:

EMB2T2R Datasheet (PDF)
Configuration:

Dual
Transistor Polarity:

PNP
Typical Input Resistor:

47 kOhms
Typical Resistor Ratio:

1
EDA/CAD Models:

Request Free CAD Models for EMB2T2R

EMB2T2R Information

General Description

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Key Features

Ultra-compact complex digital transistor
Built-In Biasing Resistors
Potential divider type
Small Surface Mount Package
Pb Free/RoHS Compliant

Specifications

Product Category	Bipolar Transistors - Pre-Biased	Configuration	Dual
Transistor Polarity	PNP	Typical Input Resistor	47 kOhms
Typical Resistor Ratio	1	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	68	Collector- Emitter Voltage VCEO Max	- 50 V
Continuous Collector Current	- 100 mA	Peak DC Collector Current	100 mA
Pd - Power Dissipation	150 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Height	0.5 mm
Length	1.6 mm	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	8000	Subcategory	Transistors
Width	1.2 mm	Part # Aliases	EMB2
Package/Case	EMT-6