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Power Field-Effect Transistor, 9A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
TO-252-3Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMP10H400SK3-13
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Factory Lead Time:
104 Weeks
EDA/CAD Models:
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The DMP10H400SK3-13 is a P-channel power MOSFET from Diodes Incorporated, designed for surface-mount applications. It has a voltage rating of 100V and a current rating of 9A at a temperature coefficient (Tc) of 42W. The device comes in a TO-252-3 package, also known as DPAK-3. This MOSFET is suitable for various applications that require high power switching and low RDS(on). Its P-channel configuration makes it ideal for use in DC-DC converters, motor drives, and other high-frequency switching circuits. The device's compact size and low thermal resistance make it an attractive option for space-constrained designs. In summary, the DMP10H400SK3-13 is a high-power P-channel MOSFET designed for surface-mount applications, offering a reliable and efficient solution for power electronics designs.
The package type for DMP10H400SK3-13 is TO-252-3, which is also known as a Dual In-Line Package (DPAK) with three leads.
The manufacturer of the DMP10H400SK3-13 is Diodes Incorporated. Diodes Incorporated is a leading global manufacturer and supplier of electronic components, including diodes, rectifiers, transmission lines, and other semiconductor-based products. The company offers a diverse range of products for various applications in the consumer electronics, computing, automotive, industrial, and telecommunications industries.
Based on the product information, the equivalent products of DMP10H400SK3-13 are likely to be other P-channel MOSFETs with similar specifications such as voltage rating (100V), current rating (9A), and package type (DPAK-3). Some possible alternatives could be STP10H400, NXP's 10N400P3, or ON Semiconductor's NTMFS10P4.
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 104 Weeks |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 9 A |
Drain-source On Resistance-Max | 0.3 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 42 W | Pulsed Drain Current-Max (IDM) | 15 A |
Reference Standard | AEC-Q101 | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Package/Case | TO-252-3 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.275 | $0.28 |
10+ | $0.238 | $2.38 |
30+ | $0.223 | $6.69 |
100+ | $0.205 | $20.50 |
500+ | $0.190 | $95.00 |
1000+ | $0.185 | $185.00 |
The prices above are for reference only.