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DMP10H400SK3-13 +BOM

Power Field-Effect Transistor, 9A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

DMP10H400SK3-13 Information

Description

The DMP10H400SK3-13 is a P-channel power MOSFET from Diodes Incorporated, designed for surface-mount applications. It has a voltage rating of 100V and a current rating of 9A at a temperature coefficient (Tc) of 42W. The device comes in a TO-252-3 package, also known as DPAK-3. This MOSFET is suitable for various applications that require high power switching and low RDS(on). Its P-channel configuration makes it ideal for use in DC-DC converters, motor drives, and other high-frequency switching circuits. The device's compact size and low thermal resistance make it an attractive option for space-constrained designs. In summary, the DMP10H400SK3-13 is a high-power P-channel MOSFET designed for surface-mount applications, offering a reliable and efficient solution for power electronics designs.

Package

The package type for DMP10H400SK3-13 is TO-252-3, which is also known as a Dual In-Line Package (DPAK) with three leads.

Manufacturer

The manufacturer of the DMP10H400SK3-13 is Diodes Incorporated. Diodes Incorporated is a leading global manufacturer and supplier of electronic components, including diodes, rectifiers, transmission lines, and other semiconductor-based products. The company offers a diverse range of products for various applications in the consumer electronics, computing, automotive, industrial, and telecommunications industries.

Equivalent

Based on the product information, the equivalent products of DMP10H400SK3-13 are likely to be other P-channel MOSFETs with similar specifications such as voltage rating (100V), current rating (9A), and package type (DPAK-3). Some possible alternatives could be STP10H400, NXP's 10N400P3, or ON Semiconductor's NTMFS10P4.

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 104 Weeks
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.3 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 42 W Pulsed Drain Current-Max (IDM) 15 A
Reference Standard AEC-Q101 Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case TO-252-3

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