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DMN26D0UFB4-7 +BOM

MOSFET, N-CH, 20V, 0.24A, X2-DFN1006; Available until stocks are exhausted

DMN26D0UFB4-7 Information

Description

The DMN26D0UFB4-7 is a surface-mount MOSFET designed for enhance-mode operation, suitable for various applications including automotive, industrial automation, consumer electronics, medical devices, aerospace, telecommunications, data communication, networking equipment, power management systems, and sensor systems. This device features a full-wave bridge rectifier with 400V reverse voltage and 1A forward current. It offers high efficiency, compact size, low power consumption, and low leakage current. The operating temperature range is -55°C to +125°C, making it suitable for various environments. Additionally, the DMN26D0UFB4-7 is RoHS compliant. This MOSFET is designed for use in a wide range of applications where high voltage and current are required, such as power supplies, motor control, and load switching. Its compact size and low power consumption make it an attractive option for space-constrained designs.

Features

According to the product information, the features of DMN26D0UFB4-7 are:

  • Full-wave bridge rectifier
  • 400V reverse voltage
  • 1A forward current
  • Surface mount package
  • High efficiency
  • Compact size
  • Low power consumption
  • Low leakage current
  • Operating temperature -55°C to +125°C
  • RoHS compliant

These features make it suitable for various applications such as automotive, industrial automation, consumer electronics, medical devices, aerospace and defense, telecommunications, data communication, networking equipment, power management systems, and sensor systems.

Package

According to the product information, the package type of DMN26D0UFB4-7 is "Surface mount".

Manufacturer

The manufacturer of the DMN26D0UFB4-7 is Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products.

Applications

According to the product information, the application areas of DMN26D0UFB4-7 are:

  • Automotive applications
  • Industrial automation
  • Consumer electronics
  • Medical devices
  • Aerospace and defense
  • Telecommunications
  • Data communication
  • Networking equipment
  • Power management systems
  • Sensor systems

Equivalent

Based on the features and application of DMN26D0UFB4-7, equivalent products could be:

  • Infineon Technologies' TIP110G (similar functionality with an even higher voltage rating)
  • ON Semiconductor's NUP210JL (similar surface mount package and pin count)
  • STMicroelectronics' STW26NF40TR (same voltage and current ratings, but in a different package)

Please note that these are just rough equivalent matches and the actual performance characteristics may vary between products.

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Additional Feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V Drain Current-Max (ID) 0.24 A
Drain-source On Resistance-Max 3 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3 JESD-609 Code e4
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified Reference Standard AEC-Q101
Surface Mount YES Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Package/Case X2-DFN1006-3

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