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MOSFET, N-CH, 20V, 0.24A, X2-DFN1006; Available until stocks are exhausted
X2-DFN1006-3Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMN26D0UFB4-7
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Obsolete
Pin Count:
3
Reach Compliance Code:
compliant
EDA/CAD Models:
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The DMN26D0UFB4-7 is a surface-mount MOSFET designed for enhance-mode operation, suitable for various applications including automotive, industrial automation, consumer electronics, medical devices, aerospace, telecommunications, data communication, networking equipment, power management systems, and sensor systems. This device features a full-wave bridge rectifier with 400V reverse voltage and 1A forward current. It offers high efficiency, compact size, low power consumption, and low leakage current. The operating temperature range is -55°C to +125°C, making it suitable for various environments. Additionally, the DMN26D0UFB4-7 is RoHS compliant. This MOSFET is designed for use in a wide range of applications where high voltage and current are required, such as power supplies, motor control, and load switching. Its compact size and low power consumption make it an attractive option for space-constrained designs.
According to the product information, the features of DMN26D0UFB4-7 are:
These features make it suitable for various applications such as automotive, industrial automation, consumer electronics, medical devices, aerospace and defense, telecommunications, data communication, networking equipment, power management systems, and sensor systems.
According to the product information, the package type of DMN26D0UFB4-7 is "Surface mount".
The manufacturer of the DMN26D0UFB4-7 is Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products.
According to the product information, the application areas of DMN26D0UFB4-7 are:
Based on the features and application of DMN26D0UFB4-7, equivalent products could be:
Please note that these are just rough equivalent matches and the actual performance characteristics may vary between products.
Pbfree Code | Yes | Part Life Cycle Code | Obsolete |
Pin Count | 3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Additional Feature | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V | Drain Current-Max (ID) | 0.24 A |
Drain-source On Resistance-Max | 3 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PBCC-N3 | JESD-609 Code | e4 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 0.35 W |
Qualification Status | Not Qualified | Reference Standard | AEC-Q101 |
Surface Mount | YES | Terminal Finish | NICKEL PALLADIUM GOLD |
Terminal Form | NO LEAD | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Package/Case | X2-DFN1006-3 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
10+ | $0.043 | $0.43 |
100+ | $0.034 | $3.40 |
300+ | $0.029 | $8.70 |
3000+ | $0.026 | $78.00 |
6000+ | $0.023 | $138.00 |
9000+ | $0.022 | $198.00 |
The prices above are for reference only.