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N-Channel 30 V 4 A 52 mO Surface Mount Power Mosfet - SOT-23
SOT23-3Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMG3402L-7
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Factory Lead Time:
104 Weeks
EDA/CAD Models:
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The DMG3402L-7 is a N-channel power MOSFET from Diodes Incorporated, packaged in a SOT23-3 package. It has a voltage rating of 30V and a current rating of 4A. This device is suitable for general-purpose switching applications where high-speed switching and low RDS(on) are required. The DMG3402L-7 is designed to operate in a wide range of temperatures, making it suitable for use in automotive, industrial, and consumer electronics applications. Its small package size and low power consumption make it an ideal choice for space-constrained designs. In summary, the DMG3402L-7 is a high-performance N-channel power MOSFET that offers a reliable and efficient switching solution for various electronic systems.
Based on the product information, here are the features of DMG3402L-7:
Please note that this is a concise summary and may not include all the features of the product.
According to the product information, the package type for DMG3402L-7 is SOT23-3.
The manufacturer of the DMG3402L-7 is Diodes Incorporated, a leading global manufacturer and supplier of high-quality electronic components.
The DMG3402L-7 is a N-channel power MOSFET suitable for general-purpose applications that require high current and low voltage. Typical application areas include:
Its small package size and low RDS(on) make it an ideal choice for space-constrained designs.
Based on the product information, DMG3402L-7 is a N-channel Trans MOSFET with a voltage rating of 30V and current rating of 4A. Equivalent products may include:
Please note that equivalent products may vary depending on the specific application and requirements.
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 104 Weeks |
Additional Feature | HIGH RELIABILITY | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 4 A |
Drain-source On Resistance-Max | 0.052 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 43.8 pF | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Package/Case | SOT23-3 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
9000+ | $0.035 | $315.00 |
6000+ | $0.035 | $210.00 |
500+ | $0.041 | $20.50 |
150+ | $0.046 | $6.90 |
50+ | $0.053 | $2.65 |
5+ | $0.067 | $0.34 |
The prices above are for reference only.