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DMG3402L-7 +BOM

N-Channel 30 V 4 A 52 mO Surface Mount Power Mosfet - SOT-23

DMG3402L-7 Information

Description

The DMG3402L-7 is a N-channel power MOSFET from Diodes Incorporated, packaged in a SOT23-3 package. It has a voltage rating of 30V and a current rating of 4A. This device is suitable for general-purpose switching applications where high-speed switching and low RDS(on) are required. The DMG3402L-7 is designed to operate in a wide range of temperatures, making it suitable for use in automotive, industrial, and consumer electronics applications. Its small package size and low power consumption make it an ideal choice for space-constrained designs. In summary, the DMG3402L-7 is a high-performance N-channel power MOSFET that offers a reliable and efficient switching solution for various electronic systems.

Features

Based on the product information, here are the features of DMG3402L-7:

  • N-channel Trans MOSFET
  • Operating voltage: 30V
  • Continuous current: 4A
  • Package: SOT23-3 (3-pin)
  • RoHS compliant

Please note that this is a concise summary and may not include all the features of the product.

Package

According to the product information, the package type for DMG3402L-7 is SOT23-3.

Manufacturer

The manufacturer of the DMG3402L-7 is Diodes Incorporated, a leading global manufacturer and supplier of high-quality electronic components.

Applications

The DMG3402L-7 is a N-channel power MOSFET suitable for general-purpose applications that require high current and low voltage. Typical application areas include:

  • Load switches
  • Power management
  • Motor control
  • Audio amplifiers
  • DC/DC converters

Its small package size and low RDS(on) make it an ideal choice for space-constrained designs.

Equivalent

Based on the product information, DMG3402L-7 is a N-channel Trans MOSFET with a voltage rating of 30V and current rating of 4A. Equivalent products may include:

  • STP16NF50 from STMicroelectronics
  • BSS84 from ON Semiconductor
  • FQP6N30L from Fairchild Semiconductor (now part of ON Semiconductor)

Please note that equivalent products may vary depending on the specific application and requirements.

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 104 Weeks
Additional Feature HIGH RELIABILITY Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.052 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 43.8 pF JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case SOT23-3

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