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DMG1012TQ-7 +BOM

N-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGS

DMG1012TQ-7 Information

Description

The DMG1012TQ-7 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) component from Diodes Incorporated. It has a breakdown voltage of 8V to 24V, making it suitable for various applications that require high voltage switching or amplification. The device comes in a SOT-523-3 package, which is a small and compact form factor. The "T&R" notation indicates that the component is available in Tape & Reel packaging, making it ideal for automated assembly processes. In summary, the DMG1012TQ-7 is a high-voltage MOSFET designed for use in various electronic circuits, offering a reliable and efficient means of switching or amplifying electrical signals.

Package

According to the product information, the package type of DMG1012TQ-7 is SOT-523-3.

Manufacturer

The manufacturer of the DMG1012TQ-7 is Diodes Incorporated, a semiconductor component manufacturer.

Applications

Based on the information provided, the DMG1012TQ-7 is a MOSFET component from Diodes Incorporated. Its application areas are likely in power management and switching circuits, such as:

  • Power supplies
  • Motor control
  • Audio equipment
  • Automotive electronics
  • Industrial control systems

Please note that this is an educated guess based on the component's characteristics and not explicitly stated by the manufacturer.

Equivalent

Based on the product information, DMG1012TQ-7 is a MOSFET from Diodes Incorporated. Equivalent products may include:

  • N-channel power MOSFETs with similar specifications (e.g., voltage rating, current handling)
  • Other MOSFETs from different manufacturers that match the DMG1012TQ-7's characteristics

Please note that exact equivalent products might not exist, as each manufacturer has its unique product lineup.

Specifications

Pbfree Code Yes Part Life Cycle Code Not Recommended
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 56 Weeks Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.63 A Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.28 W Reference Standard AEC-Q101
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Package/Case SOT-523

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