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N-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGS
SOT-523Manufacturer:
Diodes Incorporated
Mfr.Part #:
DMG1012TQ-7
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Not Recommended
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Models:
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The DMG1012TQ-7 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) component from Diodes Incorporated. It has a breakdown voltage of 8V to 24V, making it suitable for various applications that require high voltage switching or amplification. The device comes in a SOT-523-3 package, which is a small and compact form factor. The "T&R" notation indicates that the component is available in Tape & Reel packaging, making it ideal for automated assembly processes. In summary, the DMG1012TQ-7 is a high-voltage MOSFET designed for use in various electronic circuits, offering a reliable and efficient means of switching or amplifying electrical signals.
According to the product information, the package type of DMG1012TQ-7 is SOT-523-3.
The manufacturer of the DMG1012TQ-7 is Diodes Incorporated, a semiconductor component manufacturer.
Based on the information provided, the DMG1012TQ-7 is a MOSFET component from Diodes Incorporated. Its application areas are likely in power management and switching circuits, such as:
Please note that this is an educated guess based on the component's characteristics and not explicitly stated by the manufacturer.
Based on the product information, DMG1012TQ-7 is a MOSFET from Diodes Incorporated. Equivalent products may include:
Please note that exact equivalent products might not exist, as each manufacturer has its unique product lineup.
Pbfree Code | Yes | Part Life Cycle Code | Not Recommended |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 56 Weeks | Additional Feature | HIGH RELIABILITY |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (ID) | 0.63 A | Drain-source On Resistance-Max | 0.4 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.28 W | Reference Standard | AEC-Q101 |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Package/Case | SOT-523 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
3000+ | $0.037 | $111.00 |
6000+ | $0.034 | $204.00 |
10+ | $0.059 | $0.59 |
100+ | $0.047 | $4.70 |
300+ | $0.041 | $12.30 |
9000+ | $0.032 | $288.00 |
The prices above are for reference only.