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See Technical Specifications

CSD86360Q5D +BOM

25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 50 A

Manufacturer:

Texas Instruments, Inc
Mfr.Part #:

CSD86360Q5D
Datasheet:

CSD86360Q5D Datasheet (PDF)
Series:

NexFET™
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Half Bridge)
FET Feature:

Logic Level Gate
EDA/CAD Models:

Request Free CAD Models for CSD86360Q5D

CSD86360Q5D Information

Description

The Texas Instruments CSD86360Q5D is a 2-channel N-Channel MOSFET power block designed for high-frequency, high-density applications. It features a half-bridge configuration with up to 50A operation, 91% system efficiency at 25A, and high-frequency operation up to 1.5MHz. The device has an optimized 5V gate drive and ultra-low inductance package, making it suitable for power conversion and motor control applications. The CSD86360Q5D is packaged in a SON EP-8 (5x6mm) footprint, which provides high density and low profile. It also meets RoHS compliance, halogen-free, and lead-free terminal plating requirements. This device is designed to provide low switching losses and high reliability for demanding applications.

Features

Based on the product information, the features of the CSD86360Q5D are:

Half-Bridge Power Block
91% System Efficiency at 25A
Up to 50-A Operation
High-Frequency Operation (Up to 1.5 MHz)
High-Density SON 5-mm × 6-mm Footprint
Optimized for 5-V Gate Drive
Low-Switching Losses
Ultra-Low-Inductance Package
RoHS Compliant
Halogen Free
Lead-Free Terminal Plating

Package

The package type of CSD86360Q5D is SON EP-8, which is a high-density package with a footprint size of 5mm x 6mm.

Manufacturer

The manufacturer of the CSD86360Q5D is Texas Instruments (TI).

Applications

The Texas Instruments CSD86360Q5D is a high-performance MOSFET suitable for various applications, including:

DC-DC converters
Power supplies
Motor drives
LED lighting systems
Audio amplifiers
Automotive electronics

Its features make it an excellent choice for demanding power management applications that require high efficiency, low noise, and compact design.

Equivalent

Based on the specifications, some equivalent products to CSD86360Q5D are:

STP16NF50
IRF540N
NXP BUK240-50A
ON Semi N-channel MOSFETs (e.g., NTMFS4R05L)

Please note that these equivalents may have slightly different specifications or packaging, but they share similar characteristics and can be used as alternatives in certain applications.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	NexFET™
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	50A	Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	2060pF @ 12.5	Power - Max	13W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	CSD86360Q5	Package/Case	PowerLDFN-8

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Ratings and Reviews

L**m 10/12/2023

Received. Visually looks ok. A little dirty with a flux and solder drops. This is a good one type, because it have biggest diode and a good heat dissipation under the main chip.I recommend the seller and this product.

L**s 12/27/2022

Such little ones are very. Work well

E**a 02/23/2022

Delivery time quality is good.

N**s 08/14/2020

Perfect! Very good and cheap product! Good quality