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CSD17556Q5B +BOM

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm

CSD17556Q5B General Description

The CSD17556Q5B is a true powerhouse in the world of power MOSFETs, featuring a voltage rating of 30V and an impressively low on-resistance of just 1.2 milliohms. This cutting-edge device is tailor-made for synchronous rectification and power conversion applications, delivering unmatched efficiency and performance. Whether you're looking to minimize power losses or maximize energy savings, this MOSFET's compact 5mm x 6mm design and NexFET™ technology have got you covered. Upgrade your power system with the CSD17556Q5B and experience a new level of reliability and innovation

Key Features

  • Extremely Low Resistance
  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

Specifications

Source Content uid CSD17556Q5B Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.0018 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 88 pF JESD-30 Code R-PDSO-N8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 191 W
Pulsed Drain Current-Max (IDM) 400 A Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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