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CSD17381F4T +BOM

N-Channel 30 V 3.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR

  • Manufacturer:

    TI

  • Mfr.Part #:

    CSD17381F4T

  • Datasheet:

    CSD17381F4T Datasheet (PDF) pdf-icon

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    compliant

  • ECCN Code:

    EAR99

CSD17381F4T General Description

This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Key Features

  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant

Specifications

Source Content uid CSD17381F4T Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.40
Additional Feature ULTRA LOW RESISTANCE Application SWITCHING
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-XBCC-N3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Surface Mount YES Terminal Finish Nickel/Gold (Ni/Au)
Terminal Form NO LEAD Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Element Material SILICON
VDS (V) 30 Rds(on) at VGS=4.5 V (max) (mΩ) 117
Rds(on) at VGS=10 V (max) (mΩ) 109 IDM - pulsed drain current (max) (A) 10
QG (typ) (nC) 1.04 QGD (typ) (nC) 0.133
QGS (typ) (nC) 0.226 VGS (V) 12
VGSTH typ (typ) (V) 0.85 ID - silicon limited at TC=25°C (A) 3.1
Logic level Yes Operating temperature range (°C) -55 to 150
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