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CSD17381F4 +BOM

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection

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  • Datasheet:

    CSD17381F4 Datasheet (PDF) pdf-icon

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  • Part Life Cycle Code:


  • Reach Compliance Code:


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CSD17381F4 General Description

Moreover, the FemtoFET™ MOSFET is engineered and optimized to deliver consistent and reliable results, making it a preferred choice for a wide range of applications. Whether it's improving battery life in smartphones or enhancing power management in portable electronics, this technology offers versatility and reliability

Key Features

  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • Low threshold voltage
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant




Source Content uid CSD17381F4 Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.40
Additional Feature ULTRA LOW RESISTANCE Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.1 A Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 2.9 pF
JESD-30 Code R-XBCC-N3 JESD-609 Code e4
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W Pulsed Drain Current-Max (IDM) 10 A
Surface Mount YES Terminal Finish NICKEL GOLD
Terminal Form NO LEAD Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Product Category MOSFET
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 3.1 A
Rds On - Drain-Source Resistance 109 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 650 mV Qg - Gate Charge 1.04 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW Channel Mode Enhancement
Tradename NexFET Series CSD17381F4
Development Kit CSD1FNCHEVM-889 Fall Time 3.6 ns
Forward Transconductance - Min 4.8 S Height 0.35 mm
Length 1 mm Product Type MOSFET
Rise Time 1.4 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 10.8 ns Typical Turn-On Delay Time 3.4 ns
Width 0.64 mm Unit Weight 0.000014 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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