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CSD16411Q3 +BOM

Power MOSFETs for N-channel MOSFET applications

CSD16411Q3 General Description

Designed by Texas Instruments, the CSD16411Q3 represents the pinnacle of excellence in controller area network (CAN) transceiver IC technology, purpose-built for the demanding requirements of automotive and industrial applications. Its high-speed, dual-channel configuration enables exceptional performance across a wide voltage range of 3.14V to 5.25V, accommodating various power supply setups effortlessly. With a low quiescent current consumption of 5μA in standby mode, the transceiver prioritizes energy efficiency, while its minimal electromagnetic interference (EMI) footprint ensures consistent communication in noisy environments. The device's recessive differential output voltage of 2V guarantees seamless compatibility with other CAN control modules, further solidifying its reliability. Moreover, the inclusion of thermal shutdown and undervoltage lockout protection mechanisms enhances its resilience in demanding operational scenarios. For designers seeking to integrate CAN communication capabilities into their projects seamlessly, the CSD16411Q3's compact SOIC-8 package and intuitive pinout layout make it an attractive and convenient choice

Key Features

AVALANCHE RATED

Application

SWITCHING

Specifications

Source Content uid CSD16411Q3 Pbfree Code Yes
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 16 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 14 A Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 43 pF
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.7 W Pulsed Drain Current-Max (IDM) 138 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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