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CSD16409Q3 +BOM

Compact N-channel MOSFET for efficient power managemen

CSD16409Q3 General Description

N-Channel 25 V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-VSONP (5x6)

Key Features

  • Ultra Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3mm x 3.3mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications
      in Networking, Telecom and Computing Systems
    • Optimized for Control FET Applications

NexFET is a trademark of Texas Instruments.

Application

SWITCHING

Specifications

Source Content uid CSD16409Q3 Pbfree Code Yes
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 72 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 60 A Drain-source On Resistance-Max 0.0124 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 55 pF
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.6 W Pulsed Drain Current-Max (IDM) 90 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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