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CSD16401Q5 +BOM

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

CSD16401Q5 General Description

Experience the next level of power efficiency with the CSD16401Q5 power MOSFET. With a low resistance of 1.3-mΩ and a compact 5-mm x 6-mm SON package, this device is designed to deliver maximum performance in power conversion applications. Whether you're designing a high-speed circuit or a low-power system, the CSD16401Q5 offers the efficiency and reliability you need to stay ahead of the competition

Key Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • SON 5-mm × 6-mm Plastic Package

Application

  • Power Management
  • Communications & Networking
  • Computers & Computer Peripherals
  • Industrial

Specifications

Source Content uid CSD16401Q5 Pbfree Code Yes
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Additional Feature AVALANCHE RATED
Application SWITCHING Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON Product Category MOSFET
REACH Details Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 100 A Rds On - Drain-Source Resistance 1.8 mOhms
Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 21 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 3.1 W
Channel Mode Enhancement Tradename NexFET
Series CSD16401Q5 Fall Time 12.7 ns
Forward Transconductance - Min 168 S Height 1 mm
Length 6 mm Product Type MOSFET
Rise Time 30 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 16.6 ns
Width 5 mm Unit Weight 0.010582 oz

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