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25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm
CSD16301Q2
ACTIVE
The Texas Instruments CSD16301Q2 is a MOSFET N-Channel device, specifically designed for high-power conversion efficiency in power supplies. It features robust electrical design, fault protection, and rugged mechanical construction. This NexFET SON6, RL component offers reliable operation with fault-tolerant design, high power density, and low inrush current. The CSD16301Q2 is suitable for applications requiring compact power supply designs with fast recovery time and high current handling. Its features include efficient heat dissipation, low EMI generation, and rugged mechanical design. The device operates within a wide temperature range and has good high-temperature performance. In summary, the CSD16301Q2 is a high-performance MOSFET designed for power supply applications that demand robustness, reliability, and efficiency.
The CSD16301Q2 features include:
These features make the CSD16301Q2 suitable for applications that require a high level of reliability and fault tolerance, such as industrial control systems, medical devices, and automotive electronics.
The package type of CSD16301Q2 is 6-SMD, Flat Leads.
The manufacturer of the CSD16301Q2 is Texas Instruments (TI). Texas Instruments is a leading semiconductor company that designs, manufactures, and tests semiconductors and related technologies. They are known for their wide range of products, including analog and digital integrated circuits, sensors, and embedded processors.
Source Content uid | CSD16301Q2 | Pbfree Code | Yes |
---|---|---|---|
Part Life Cycle Code | Active | Pin Count | 6 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Avalanche Energy Rating (Eas) | 10 mJ |
Case Connection | DRAIN | Configuration | SINGLE |
DS Breakdown Voltage-Min | 25 V | Drain Current-Max (ID) | 20 A |
Drain-source On Resistance-Max | 0.034 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 17 pF | JESD-30 Code | R-PDSO-N6 |
JESD-609 Code | e4 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 2.3 W |
Pulsed Drain Current-Max (IDM) | 20 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | NICKEL PALLADIUM GOLD |
Terminal Form | NO LEAD | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Package/Case | WSON (DQK)-6 |
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6000+
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