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CSD16301Q2

In Stock: 5,959

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

CSD16301Q2 Information

Description

The Texas Instruments CSD16301Q2 is a MOSFET N-Channel device, specifically designed for high-power conversion efficiency in power supplies. It features robust electrical design, fault protection, and rugged mechanical construction. This NexFET SON6, RL component offers reliable operation with fault-tolerant design, high power density, and low inrush current. The CSD16301Q2 is suitable for applications requiring compact power supply designs with fast recovery time and high current handling. Its features include efficient heat dissipation, low EMI generation, and rugged mechanical design. The device operates within a wide temperature range and has good high-temperature performance. In summary, the CSD16301Q2 is a high-performance MOSFET designed for power supply applications that demand robustness, reliability, and efficiency.

Features

The CSD16301Q2 features include:

  • Robust electrical design
  • Fully protected against faults
  • High power conversion efficiency
  • Low inrush current upon startup
  • Rugged mechanical construction
  • Reliable operation
  • Fault-tolerant design
  • High power density
  • Low inrush current
  • Minimal maintenance required

These features make the CSD16301Q2 suitable for applications that require a high level of reliability and fault tolerance, such as industrial control systems, medical devices, and automotive electronics.

Package

The package type of CSD16301Q2 is 6-SMD, Flat Leads.

Manufacturer

The manufacturer of the CSD16301Q2 is Texas Instruments (TI). Texas Instruments is a leading semiconductor company that designs, manufactures, and tests semiconductors and related technologies. They are known for their wide range of products, including analog and digital integrated circuits, sensors, and embedded processors.

Specifications

Source Content uid CSD16301Q2 Pbfree Code Yes
Part Life Cycle Code Active Pin Count 6
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN Configuration SINGLE
DS Breakdown Voltage-Min 25 V Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.034 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 17 pF JESD-30 Code R-PDSO-N6
JESD-609 Code e4 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 2.3 W
Pulsed Drain Current-Max (IDM) 20 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Package/Case WSON (DQK)-6

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