Payment Method
CM400DY-12NF +BOM
Trans Igbt Module N-Ch 600V 400A
Module-
Manufacturer:
-
Mfr.Part #:
CM400DY-12NF
-
Datasheet:
-
Product:
IGBT Silicon Modules
-
Configuration:
Dual
-
Collector- Emitter Voltage VCEO Max:
600 V
-
Collector-Emitter Saturation Voltage:
1.7 V
-
EDA/CAD Models:
Send all BOMs to [email protected], or fill out the form below for a quote on CM400DY-12NF. Guaranteed response within 12hr.
Availability: 5993 PCS
Please fill in the short form below and we will provide you the quotation immediately.
Description
The CM400DY-12NF is a high-power IGBT module designed for efficient and reliable power electronic applications. It features a three-phase, half-bridge configuration with a current rating of 400A and voltage rating of 1200V. This module offers fast switching, high power density, low saturation voltage, and robust reliability. The CM400DY-12NF is suitable for various industrial applications, including industrial automation, power supplies, renewable energy, electric vehicles, medical devices, motor control, switching power supplies, uninterruptible power supplies, welding equipment, and telecommunications. Its chassis mount design makes it easy to integrate into existing systems. Overall, the CM400DY-12NF is a reliable and efficient IGBT module for demanding power electronic applications that require high current and voltage ratings.
Features
The CM400DY-12NF features include:
- Module Type: IGBT
- Mounting Type: Chassis Mount
- Configuration: Three Phase
- Current Rating: 400A
- Voltage Rating: 1200V
- Package: Half-Bridge
- Fast Switching
- High Power Density
- Low Saturation Voltage
- Robust and Reliable
These features make the CM400DY-12NF suitable for various applications such as industrial automation, power supplies, renewable energy, electric vehicles, medical devices, motor control, switching power supplies, uninterruptible power supplies, welding equipment, and telecommunications.
Package
According to the product information, the package type of CM400DY-12NF is Half-Bridge.
Pinout
The CM400DY-12NF IGBT module has a half-bridge configuration with 7 pins:
- Pins 1-2: Collector (C)
- Pin 3: Gate (G)
- Pin 4: Emitter (E)
- Pins 5-6: Collector (C) and Emitter (E) for the second leg
- Pin 7: Ground
The module is designed to be chassis-mounted, making it suitable for high-power applications. The IGBTs are fast-switching and have a low saturation voltage, ensuring efficient operation in a wide range of power electronic applications.
Manufacturer
The manufacturer of the CM400DY-12NF is Mitsubishi Electric, a Japanese multinational electrical equipment and electronics company.
Applications
According to the product information, the application areas of CM400DY-12NF are:
- Industrial automation
- Power supplies
- Renewable energy
- Electric vehicles
- Medical devices
- Motor control
- Switching power supplies
- Uninterruptible power supplies
- Welding equipment
- Telecommunications
Equivalent
Based on the product information, CM400DY-12NF is a high-power IGBT module with specific features such as current rating (400A), voltage rating (1200V), and package type (half-bridge). Equivalent products would likely be other high-power IGBT modules from various manufacturers that share similar specifications. Some possible alternatives could be:
- Infineon's IPW65R050P7
- STMicroelectronics' TIPM40H12Q
- ON Semiconductor's NTHG400L12
Please note that these are just examples and not necessarily exact equivalents, as different manufacturers may have slightly varying specifications.
Specifications
Product Category: | IGBT Modules | Product: | IGBT Silicon Modules |
Configuration: | Dual | Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.7 V | Continuous Collector Current at 25 C: | 400 A |
Gate-Emitter Leakage Current: | 500 nA | Pd - Power Dissipation: | 1130 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Maximum Gate Emitter Voltage: | 20 V | Mounting Style: | Screw |
Product Type: | IGBT Modules | Factory Pack Quantity: | 10 |
Subcategory: | IGBTs | Technology: | Si |
Package/Case | Module |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
In Stock: 5,993
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
Related
Top Sellers
-
2SC1971
MITSUBISHI
1000+ $1.815
-
2SC2879
MITSUBISHI/TOSHIBA
RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4
-
2SC1969
Mitsubishi
Advanced epitaxial planar technology for improved signal strengt
-
RD16HHF1
Mitsubishi
High-performance RF transistor for high-frequency applications
-
RD70HVF1
Mitsubishi
Powerful amplifier for reliable wireless communicatio
I order a second time-everything is fine.