Payment Method +




Transistor IGBT Module
ModuleManufacturer:
Mfr.Part #:
CM300DU-24NFH
Datasheet:
Product:
IGBT Silicon Modules
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
5 V
EDA/CAD Models:
Send all BOMs to
[email protected],
or fill out the form below for a quote on CM300DU-24NFH. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
Here's a concise introduction to the CM300DU-24NFH: The CM300DU-24NFH is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Powerex Inc. This module is designed for demanding applications that require reliable and efficient power conversion. With a current rating of 300A, voltage rating of 1200V, and power rating of 1900W, the CM300DU-24NFH is well-suited for industrial motor drives, welding equipment, and other high-power applications. Its dual configuration enables fast switching and low thermal resistance, making it an excellent choice for demanding applications where reliability and efficiency are crucial. The module also features overcurrent protection to prevent damage from excessive current surges. Overall, the CM300DU-24NFH is a reliable and efficient IGBT module designed to meet the needs of a wide range of applications in industries such as industrial, renewable energy, and medical equipment.
The CM300DU-24NFH features:
This module is suitable for various applications such as industrial motor drives, welding equipment, uninterruptible power supplies (UPS), solar inverters, energy storage systems, electric vehicles, power factor correction systems, medical equipment, telecommunication systems, and renewable energy systems.
According to the product information, the package type of CM300DU-24NFH is "MODULE".
The manufacturer of the CM300DU-24NFH is Powerex Inc., a semiconductor component supplier.
Based on the product information, the application areas of CM300DU-24NFH are:
Based on the product information, CM300DU-24NFH is a high-power IGBT module with a current rating of 300A and voltage rating of 1200V. Equivalent products would be other high-power IGBT modules with similar specifications from various manufacturers, such as:
Please note that these are just examples and not an exhaustive list.
Product Category: | IGBT Modules | Product: | IGBT Silicon Modules |
Configuration: | Dual | Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 5 V | Continuous Collector Current at 25 C: | 300 A |
Gate-Emitter Leakage Current: | 1 uA | Pd - Power Dissipation: | 1130 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Maximum Gate Emitter Voltage: | 20 V | Mounting Style: | Screw |
Product Type: | IGBT Modules | Factory Pack Quantity: | 10 |
Subcategory: | IGBTs | Technology: | Si |
Package/Case | Module |
After-Sales & Settlement Related
Payment Method +
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method +
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product Quality Guarantee +
Returns and exchanges are supported, provided the items remain in their original condition.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices above are for reference only.
2SC1971
MITSUBISHI
1000+ $1.815
2SC1969
Mitsubishi
Advanced epitaxial planar technology for improved signal strengt
RD16HHF1
Mitsubishi
High-performance RF transistor for high-frequency applications
RD70HVF1
Mitsubishi
Powerful amplifier for reliable wireless communicatio
2SC1972
Mitsubishi
Compact RF amplifier module with high gain and lineari
Corresponds to the description. The board is made at a high level. Seller thanks