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Power rating of 650W
ModuleManufacturer:
Mfr.Part #:
CM100DY-24NF
Datasheet:
Product:
IGBT Silicon Modules
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
1.8 V
EDA/CAD Models:
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Here's a concise introduction to the CM100DY-24NF: The Powerex Inc.'s CM100DY-24NF is a POWER IGBT Transistor Module designed for high-reliability applications. This module features over-current protection, short-circuit protection, and a high current rating of 100A, making it suitable for demanding tasks. With a voltage rating of 1200V, the CM100DY-24NF can withstand heavy loads while maintaining low conduction losses. Its modular design makes it easy to integrate into various systems. The device finds applications in industrial motor control, renewable energy inverters, UPS systems, electric vehicles, solar power systems, battery management systems, welding equipment, switched-mode power supplies, medical equipment, and telecommunications equipment. In summary, the CM100DY-24NF is a robust IGBT transistor module designed to provide high-performance and reliable operation in a wide range of applications.
According to the product information, the features of CM100DY-24NF are:
These features make it suitable for various applications such as motor control, power supplies, UPS systems, and more.
According to the product information, the package type of CM100DY-24NF is MODULE.
The manufacturer of the CM100DY-24NF is Powerex Inc.
According to the provided information, the application areas of CM100DY-24NF are:
Based on the product information, CM100DY-24NF is a POWER IGBT TRANSISTOR with a current rating of 100A and voltage rating of 1200V. Equivalent products may include:
Please note that equivalent products may vary depending on the specific application and requirements.
Product Category: | IGBT Modules | Product: | IGBT Silicon Modules |
Configuration: | Dual | Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 1.8 V | Continuous Collector Current at 25 C: | 100 A |
Gate-Emitter Leakage Current: | 500 nA | Pd - Power Dissipation: | 650 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Maximum Gate Emitter Voltage: | 20 V | Mounting Style: | Screw |
Product Type: | IGBT Modules | Factory Pack Quantity: | 10 |
Subcategory: | IGBTs | Technology: | Si |
Package/Case | Module |
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