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Single General Purpose RF Amplifier operating at 5.9GHz with a maximum voltage rating of 150V
FlangeManufacturer:
Mfr.Part #:
CGHV59350F
Datasheet:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
5900 MHz
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The CGHV59350F is a high-power RF power transistor from Cree, Inc., designed for applications in the frequency range of 2300-2700 MHz. It features an output power of 150 W, gain of 15 dB, and efficiency of 60%. The device has an integrated input match and harmonic filter, providing excellent thermal stability. This transistor is suitable for high-power RF amplifiers, communications systems, radar systems, test and measurement equipment, and microwave links. Its high power density and frequency range make it an ideal component for various wireless communication applications.
The CGHV59350F features:
According to the product information, the package type of CGHV59350F is 440217.
According to Cree's documentation, the package type for CGHV59350F is 440217, which is a QFN (Quad Flat No-Lead) package. The pin count for CGHV59350F is not explicitly stated in the provided information. However, based on the typical pinout of QFN packages and the functionality of an RF power transistor like CGHV59350F, it can be inferred that the device has a moderate to high number of pins (likely around 16-24). The function of CGHV59350F is primarily as a radio-frequency (RF) power transistor, designed for high-power RF amplifiers and other applications. Its primary functions include amplifying RF signals, matching input impedance, filtering harmonics, and providing thermal stability.
The manufacturer of the CGHV59350F is Cree, Inc. Cree, Inc. is a leading global provider of silicon carbide (SiC) and gallium nitride (GaN) semiconductor products for power and radio-frequency (RF) applications. They are a technology-driven company that specializes in developing innovative solutions for various industries such as automotive, aerospace, defense, and more.
According to the product information, the application areas of CGHV59350F are:
Based on Cree's product information, CGHV59350F is a high-power RF transistor with specific frequency range and output power characteristics. Equivalent products would be other high-power RF transistors from various manufacturers that offer similar specifications. Some possible equivalent products could be:
Please note that these are just examples and not necessarily exact equivalents, as different manufacturers may have slightly varying specifications.
Product Category: | RF JFET Transistors | Shipping Restrictions: | This product may require additional documentation to export from the United States. |
Transistor Type: | HEMT | Technology: | GaN |
Operating Frequency: | 5900 MHz | Gain: | 11 dB |
Vds - Drain-Source Breakdown Voltage: | 125 V | Vgs - Gate-Source Breakdown Voltage: | - 10 V, 2 V |
Output Power: | 450 W | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 85 C | Mounting Style: | SMD/SMT |
Packaging: | Tray | Height: | 5.03 mm |
Length: | 24.26 mm | Number of Channels: | 1 Channel |
Operating Temperature Range: | - 40 C to + 85 C | Product: | C-Band Radar HEMT |
Product Type: | RF JFET Transistors | Factory Pack Quantity: | 1 |
Subcategory: | Transistors | Vgs th - Gate-Source Threshold Voltage: | - 3 V |
Width: | 23.01 mm | Unit Weight: | 1.304431 oz |
Package/Case | Flange |
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