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See Technical Specifications

CGH40180PP +BOM

GaN HEMT FET offering high reliability and low thermal resistance for demanding RF designs

Manufacturer:

WOLFSPEED, INC
Mfr.Part #:

CGH40180PP
Datasheet:

CGH40180PP Datasheet (PDF)
Series:

GaN
Technology:

HEMT
Frequency:

0Hz ~ 2.5GHz
Gain:

19dB
EDA/CAD Models:

Request Free CAD Models for CGH40180PP

CGH40180PP Information

Description

The WOLFSPEED, INC. CGH40180PP is a Trans RF MOSFET designed for high-power applications. It operates at a voltage of 120V and offers an impressive current handling capability of 24A. The device features a 5-pin package type 44019. This transister can handle demanding wireless communication systems that require high power amplification, such as radio-frequency amplifiers in wireless communication infrastructure, military communications systems, or satellite transmitters. The CGH40180PP's performance and reliability make it an ideal component for applications that demand maximum power efficiency and minimum distortion.

Package

According to the product information, the package type of CGH40180PP is "5-Pin Case", specifically referred to as Package "440199".

Manufacturer

The manufacturer of the CGH40180PP product is WOLFSPEED, INC. Wolfspeed is a leading manufacturer of power electronics and semiconductor products, specializing in silicon carbide (SiC) and gallium nitride (GaN) based solutions for electric vehicle charging, renewable energy systems, industrial power conversion, and more.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs	Series	GaN
Technology	HEMT	Frequency	0Hz ~ 2.5GHz
Gain	19dB	Voltage - Test	28 V
Current Rating (Amps)	56A	Noise Figure	-
Current - Test	2 A	Power - Output	220W
Voltage - Rated	84 V	Base Product Number	CGH40
Product Category:	RF JFET Transistors	Transistor Type:	HEMT
Technology:	GaN	Operating Frequency:	1 GHz to 2.5 GHz
Gain:	19 dB	Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V	Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Id - Continuous Drain Current:	24 A	Output Power:	220 W
Maximum Drain Gate Voltage:	-	Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C	Pd - Power Dissipation:	-
Mounting Style:	Screw Mount	Packaging:	Tray
Application:	-	Class:	-
Configuration:	Dual	Development Kit:	CGH40180PP-TB
Fall Time:	-	Forward Transconductance - Min:	-
Gate-Source Cutoff Voltage:	-	Height:	4.34 mm
Length:	29 mm	NF - Noise Figure:	-
Number of Channels:	2 Channel	Operating Temperature Range:	-
P1dB - Compression Point:	-	Product:	GaN HEMT
Product Type:	RF JFET Transistors	Rds On - Drain-Source Resistance:	-
Rise Time:	-	Factory Pack Quantity:	1
Subcategory:	Transistors	Typical Turn-Off Delay Time:	-
Vgs th - Gate-Source Threshold Voltage:	- 3 V	Width:	5.97 mm
Unit Weight:	1.033668 oz	Package/Case	SMD