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Reliable solution for wireless communication systems and satellite equipme
4-Micro-XManufacturer:
Mfr.Part #:
CE3512K2
Datasheet:
Technology:
pHEMT FET
Frequency:
12GHz
Gain:
13.7dB
Voltage - Test:
2 V
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The CE3512K2 is a Trans RF FET (Field Effect Transistor) from California Eastern Laboratories, designed for use in radio frequency (RF) applications. It operates at a voltage of 4V and has a current rating of 0.068A. The device features a MICRO-X-4 package, which is a compact and reliable design. The CE3512K2 is suitable for use in various RF-based systems, including wireless communication devices, radar systems, and other applications where high-frequency signals need to be transmitted or received. Its small size and low power consumption make it an attractive option for designers seeking to miniaturize their systems while maintaining performance. Overall, the CE3512K2 is a versatile and reliable component that can help engineers create innovative RF-based solutions with improved performance and reduced size.
According to the product information, the package type of CE3512K2 is MICRO-X-4.
Based on the product information, the CE3512K2 has a pin count of 4 and is a Trans RF FET (Field-Effect Transistor) with the following functions:
This component is designed for radio frequency (RF) applications, specifically for use in transceiver circuits.
The manufacturer of the CE3512K2 is California Eastern Laboratories (CEL). CEL is a leading supplier of high-reliability semiconductor components, including amplifiers, switches, and sensors. The company specializes in providing customized solutions for demanding applications such as aerospace, defense, medical devices, and industrial equipment. With over 50 years of experience, CEL has established itself as a trusted partner for companies requiring high-performance, reliable, and robust electronic components.
Based on the information provided, the CE3512K2 is a Trans RF FET with a voltage rating of 4V and current rating of 0.068A. Its application areas are likely in radio frequency (RF) applications such as wireless communication systems, radar systems, and other high-frequency devices that require low noise and high gain amplification.
Based on my research, the CE3512K2 is a Trans RF FET with specific parameters (4V, 0.068A). Possible equivalent products could be:
Please note that these suggestions are based on general product knowledge and may not be an exhaustive or definitive match, as the manufacturer's specific part numbering conventions might not allow for direct substitutions.
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs | Technology | pHEMT FET |
Frequency | 12GHz | Gain | 13.7dB |
Voltage - Test | 2 V | Current Rating (Amps) | 15mA |
Noise Figure | 0.5dB | Current - Test | 10 mA |
Power - Output | 125mW | Voltage - Rated | 4 V |
Base Product Number | CE3512 | Product Category: | RF JFET Transistors |
Transistor Type: | pHEMT | Technology: | GaAs |
Vds - Drain-Source Breakdown Voltage: | 4 V | Id - Continuous Drain Current: | 10 mA |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 125 C |
Pd - Power Dissipation: | 125 mW | Mounting Style: | SMD/SMT |
Packaging: | Bulk | Forward Transconductance - Min: | 54 |
Product Type: | RF JFET Transistors | Factory Pack Quantity: | 1 |
Subcategory: | Transistors | Unit Weight: | 0.000581 oz |
Package/Case | 4-Micro-X |
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1+ | - | - |
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