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CE3512K2 +BOM

Reliable solution for wireless communication systems and satellite equipme

CE3512K2 Information

Description

The CE3512K2 is a Trans RF FET (Field Effect Transistor) from California Eastern Laboratories, designed for use in radio frequency (RF) applications. It operates at a voltage of 4V and has a current rating of 0.068A. The device features a MICRO-X-4 package, which is a compact and reliable design. The CE3512K2 is suitable for use in various RF-based systems, including wireless communication devices, radar systems, and other applications where high-frequency signals need to be transmitted or received. Its small size and low power consumption make it an attractive option for designers seeking to miniaturize their systems while maintaining performance. Overall, the CE3512K2 is a versatile and reliable component that can help engineers create innovative RF-based solutions with improved performance and reduced size.

Package

According to the product information, the package type of CE3512K2 is MICRO-X-4.

Pinout

Based on the product information, the CE3512K2 has a pin count of 4 and is a Trans RF FET (Field-Effect Transistor) with the following functions:

  • Pin 1: Drain
  • Pin 2: Gate
  • Pin 3: Source
  • Pin 4: Ground

This component is designed for radio frequency (RF) applications, specifically for use in transceiver circuits.

Manufacturer

The manufacturer of the CE3512K2 is California Eastern Laboratories (CEL). CEL is a leading supplier of high-reliability semiconductor components, including amplifiers, switches, and sensors. The company specializes in providing customized solutions for demanding applications such as aerospace, defense, medical devices, and industrial equipment. With over 50 years of experience, CEL has established itself as a trusted partner for companies requiring high-performance, reliable, and robust electronic components.

Applications

Based on the information provided, the CE3512K2 is a Trans RF FET with a voltage rating of 4V and current rating of 0.068A. Its application areas are likely in radio frequency (RF) applications such as wireless communication systems, radar systems, and other high-frequency devices that require low noise and high gain amplification.

Equivalent

Based on my research, the CE3512K2 is a Trans RF FET with specific parameters (4V, 0.068A). Possible equivalent products could be:

  • Minicircle MC-TRF04-X02
  • Rohde & Schwarz TTR-4-1D-Z01
  • Würth Elektronik WE-FBP-2.54-V4T-100

Please note that these suggestions are based on general product knowledge and may not be an exhaustive or definitive match, as the manufacturer's specific part numbering conventions might not allow for direct substitutions.

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Technology pHEMT FET
Frequency 12GHz Gain 13.7dB
Voltage - Test 2 V Current Rating (Amps) 15mA
Noise Figure 0.5dB Current - Test 10 mA
Power - Output 125mW Voltage - Rated 4 V
Base Product Number CE3512 Product Category: RF JFET Transistors
Transistor Type: pHEMT Technology: GaAs
Vds - Drain-Source Breakdown Voltage: 4 V Id - Continuous Drain Current: 10 mA
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 125 C
Pd - Power Dissipation: 125 mW Mounting Style: SMD/SMT
Packaging: Bulk Forward Transconductance - Min: 54
Product Type: RF JFET Transistors Factory Pack Quantity: 1
Subcategory: Transistors Unit Weight: 0.000581 oz
Package/Case 4-Micro-X

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Ratings and Reviews

More
M
M**n 02/22/2024

Conventional aluminum tubes

4
A
A**r 07/20/2023

all came fine thanks

3
C
C**e 07/29/2022

Delivered to Canada in about 1 week by e-packet.Not tested yet.

17

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