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CA3127E

In Stock: 5,136

Individual Bipolar Junction Transistor Array in DIP Package

CA3127E Information

Package

The package type of CA3127E is PDIP-16, which stands for Plastic Dual In-Line Package with a 16-pin configuration.

Pinout

The CA3127E is a 16-pin DIP (Dual In-Line Package) bipolar junction transistor (BJT) array from Renesas Electronics. It has an independent configuration, meaning each transistor can be controlled separately.

The pin count of the CA3127E is 16, and its functions are:

  • Pins 1-8: Transistor arrays (4 x NPN, 4 x PNP)
  • Pins 9-10: VCC and GND
  • Pins 11-12: Enable inputs for each transistor array
  • Pins 13-14: Collector outputs for each transistor array
  • Pins 15-16: Emitter outputs for each transistor array

The CA3127E is suitable for various applications, including motor control, power supplies, and audio amplifiers.

Manufacturer

The manufacturer of the CA3127E is Renesas Electronics. Renesas Electronics is a Japanese semiconductor manufacturing company that specializes in designing, developing, and manufacturing of microcontrollers, analog, power management, and logic devices.

Applications

The Renesas Electronics CA3127E is a bipolar junction transistor array, suitable for various applications that require independent control of multiple transistors. Some common application areas include:

  • Audio amplifiers
  • Motor drivers
  • Power supplies
  • Switching circuits
  • Telecommunications equipment

These are just a few examples, and the actual application may vary depending on the specific requirements of your project.

Equivalent

Based on Renesas Electronics' documentation, the equivalent products for CA3127E are:

  • CA3131E
  • CA3141E
  • CA3151E

These transistors have similar characteristics and applications as CA3127E. Please note that this information is subject to change and may not be up-to-date or accurate.

Specifications

Product Category Bipolar Transistors - BJT Transistor Polarity NPN
Configuration Quint Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 20 V Emitter- Base Voltage VEBO 4 V
Maximum DC Collector Current 20 mA Pd - Power Dissipation 85 mW
Gain Bandwidth Product fT 1 GHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C DC Collector/Base Gain hfe Min 35 at 5 mA, 6 V
Height 4.95 mm Length 19.68 mm
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si Width 7.11 mm
Unit Weight 0.057419 oz Package/Case PDIP-16

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