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CA3096E

In Stock: 7,967

CA3096E product description

CA3096E Information

Description

The Renesas Electronics CA3096E is a high-performance bipolar junction transistor (BJT) array, designed for various applications. This PDIP-16 packaged IC offers high-speed amplification, fast switching, and high current handling capabilities. It features low noise and wide bandwidth operation, making it suitable for audio amplifier designs. The CA3096E is a versatile component that can be used in communication systems, audio processing applications, signal conditioning circuits, data acquisition systems, industrial control systems, medical devices, automotive electronics, instrumentation, sensor interfaces, and power supply monitoring. Its rugged and high-reliability performance ensures reliable operation in harsh environments. Overall, the CA3096E is a flexible and easy-to-use IC that can be employed in a wide range of applications where high-speed amplification and switching are required.

Features

According to the product information, the features of the CA3096E are:

  • High-speed, low-power amplifier
  • Fast switching, high-current transistor
  • Low noise, wide bandwidth operation
  • Multi-purpose IC for audio amplifiers
  • Rugged, high-reliability performance
  • Easy to use, flexible design

These features make it suitable for various applications such as communication systems, audio processing, signal conditioning circuits, and more.

Package

The package type of CA3096E is PDIP-16, which stands for Plastic Dual In-Line Package with a 16-pin configuration.

Pinout

The CA3096E is a 16-pin DIP (Dual In-Line Package) bipolar junction transistor array from Renesas Electronics. It has 12 independent transistors, each with its own base, collector, and emitter pins.

Here's the pin count and function:

  • Pin 1-4: Transistor 1 (Base, Collector, Emitter)
  • Pin 5-8: Transistor 2 (Base, Collector, Emitter)
  • ...
  • Pin 13-16: Transistor 12 (Base, Collector, Emitter)

Each transistor has a high current gain, making it suitable for amplifying and switching applications. The CA3096E is commonly used in audio processing, communication systems, industrial control, and other applications where high-speed and low-power amplification are required.

Manufacturer

The manufacturer of the CA3096E is Renesas Electronics, a Japanese multinational semiconductor manufacturing company that specializes in microcontrollers, analog semiconductors, and power management devices.

Applications

The CA3096E is suitable for various applications, including communication systems, audio processing, signal conditioning circuits, data acquisition systems, industrial control systems, medical devices, automotive electronics, instrumentation, sensor interfaces, and power supply monitoring. Its high-speed, low-power amplifier capabilities make it a versatile component for a wide range of electronic systems.

Specifications

Product Category Bipolar Transistors - BJT Transistor Polarity NPN, PNP
Configuration Quint Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 45 V Emitter- Base Voltage VEBO 6 V
Maximum DC Collector Current 50 mA Pd - Power Dissipation 200 mW
Gain Bandwidth Product fT 335 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C DC Collector/Base Gain hfe Min 150 at 1 mA, 5 V
Height 4.95 mm Length 19.68 mm
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si Width 7.11 mm
Unit Weight 0.057419 oz Package/Case PDIP-16

CA3096E FAQs

1.Q: Are there related parts or alternatives to the CA3096E?

A: Similar devices include the LM3096 (National Semiconductor) or other BJT arrays like the MAT03 (matched dual NPN). Check Renesas/Intersil’s portfolio for equivalents.

2.Q: What is the typical DC current gain (hfe) of the CA3096E?

A: The minimum hfe is 150 at 1mA collector current and 5V VCE.

3.Q: What package does the CA3096E use?

A: It comes in a PDIP-16 (Plastic Dual-In-Line) package with dimensions 19.68mm (L) × 7.11mm (W) × 4.95mm (H).

4.Q: What are the absolute maximum ratings for the CA3096E?

A: Absolute max ratings include VCBO = 45V, VCEO = 40V, VEBO = 6V, and a DC collector current of 50mA. Exceeding these may damage the device.

5.Q: What is the maximum power dissipation (Pd) for the CA3096E?

A: The maximum power dissipation is 200mW under recommended operating conditions.

6.Q: What are typical applications for the CA3096E?

A: It is used in analog signal processing, amplifiers, oscillators, level shifters, and other circuits requiring matched transistor pairs or compact multi-transistor designs.

7.Q: What are the key features of the CA3096E?

A: Key features include a 40V VCEO rating, 335MHz gain bandwidth (fT), quint NPN/PNP transistor array, 50mA max collector current, and operation from -55°C to +125°C.

8.Q: What is the pinout configuration of the CA3096E transistor array?

A: The CA3096E is a quint (5-transistor) array in a PDIP-16 package, with NPN and PNP transistors arranged in a shared-emitter or independent configuration. Refer to the datasheet for the exact pinout diagram.

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