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CA3096AE

In Stock: 4,544

Bipolar Transistors - BJT

Manufacturers: INTERSIL/HARRAS
Mfr.Part#:
CA3096AE
Datasheet:
CA3096AE Datasheet (PDF)
Package/Case:
PDIP-16
Product Type:
Single Bipolar Transistors
Lifecycle:
Obsolete
EDA/CAD Models:
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CA3096AE Information

Description

The Thomson Consumer Electronics' CA3096AE is an independent bipolar junction transistor array, packaged in a 16-pin dual in-line package (PDIP-16). It contains five general-purpose Silicon NPN transistors, each with a beta of at least 100 at a collector current of 100uA. This component operates over a wide temperature range of -55°C to 125°C and is designed for use in amplifiers, mixers, and signal processing applications. This transistor array can be used in various applications such as linear amplification, voltage-controlled amplifiers, current-controlled amplifiers, and signal processing algorithms like waveform generation, frequency modulation, discrimination, and phase detection. Its versatility makes it a suitable component for various industries including audio equipment, telecommunications, medical devices, and more. Overall, the CA3096AE is an excellent choice for designers looking for an independent transistor array to amplify or process signals in their projects.

Features

The CA3096AE features five general-purpose silicon NPN transistors, designed for amplifiers, mixers, and signal processing applications. Each transistor has a beta of at least 100 at a collector current of 100uA, operating over a wide temperature range of -55°C to 125°C.

Package

The package type of CA3096AE is PDIP-16 (Plastic Dual In-Line Package with 16 leads).

Pinout

According to the product information, the CA3096AE has a package type of PDIP-16, which means it has 16 pins. As for the function, the CA3096AE is an array of five independent bipolar junction transistors (BJTs) in a single package. Each transistor can be used separately for various applications such as amplification, signal processing, and more.

Manufacturer

The manufacturer of the CA3096AE is Thomson Consumer Electronics.

Applications

According to the product information, the application areas of CA3096AE are: 1. Linear amplification 2. Voltage-controlled amplifiers 3. Current-controlled amplifiers 4. Signal processing applications 5. Waveform generation 6. Frequency modulation 7. Frequency discrimination 8. Phase detector circuits 9. Signal mixing and switching applications 10. Voltage-controlled filters

Equivalent

The equivalent products of CA3096AE are:

NTE Electronics: NTE5105
ON Semiconductor: MMBT3904-7-N8
Texas Instruments: SN5409DR
Fairchild Semiconductor: FMMT516P

Please note that these equivalents may have slight variations in specifications or packaging.

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN, PNP
Configuration	Quint	Collector- Emitter Voltage VCEO Max	40 V
Collector- Base Voltage VCBO	45 V	Emitter- Base Voltage VEBO	6 V
Maximum DC Collector Current	50 mA	Pd - Power Dissipation	200 mW
Gain Bandwidth Product fT	335 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C	DC Collector/Base Gain hfe Min	150 at 1 mA, 5 V
Height	4.95 mm	Length	19.68 mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	7.11 mm
Unit Weight	0.057419 oz	Package/Case	PDIP-16

CA3096AE FAQs

1.Q: What technology is used in the CA3096AE transistors?

A: The CA3096AE employs silicon (Si) technology for reliable performance in high-frequency and mixed-signal applications.

2.Q: Are there related parts to the CA3096AE for design flexibility?

A: Similar devices include the CA3086 and CA3046 transistor arrays, which offer comparable functionality in analog signal processing.

3.Q: What is the typical power dissipation of the CA3096AE?

A: The maximum power dissipation is 200 mW under normal operating conditions.

4.Q: Does the CA3096AE comply with any industry certification standards?

A: It follows the JEDEC MS-001-BB ISSUE D standard for its dual-in-line (E16.3) package design.

5.Q: What is the DC current gain (hfe) specification for the CA3096AE?

A: The minimum hfe is 150 at 1 mA collector current and 5 V collector-emitter voltage.

6.Q: What are the recommended operating conditions for the CA3096AE?

A: Operate within -55°C to +125°C, with a maximum DC collector current of 50 mA and power dissipation not exceeding 200 mW.

7.Q: What package does the CA3096AE use?

A: It is housed in a PDIP-16 package with dimensions 19.68 mm (length) × 7.11 mm (width) × 4.95 mm (height).

8.Q: What is the absolute maximum collector-emitter voltage (VCEO) for the CA3096AE?

A: The absolute maximum VCEO is 40 V, with a collector-base voltage (VCBO) of 45 V and emitter-base voltage (VEBO) of 6 V.

9.Q: What are the typical applications for the CA3096AE?

A: It is used for signal amplification, mixing, buffering, and high-frequency circuits in communication systems, test equipment, and analog designs.

10.Q: What are the key features of the CA3096AE transistor array?

A: The CA3096AE integrates five NPN/PNP transistors in a single PDIP-16 package, offers a gain bandwidth (fT) of 335 MHz, supports up to 40 V VCEO, and operates across -55°C to +125°C.

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