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Powerful BJTs for amplifying audio signals, driving speakers, and switching circuits
CA3081
Obsolete
The CA3081 is a bipolar junction transistor (BJT) from Rochester Electronics LLC, packaged in a PDIP-16 format. It's a general-purpose transistor suitable for various applications. As an NPN transistor, the CA3081 can be used as a switch, amplifier, or voltage regulator. Its characteristics make it suitable for use in digital and analog circuits, including audio amplifiers, power supplies, and motor control systems. The CA3081 has a high current gain (hFE) of around 100-200, making it suitable for applications where high current is required. It also has a low input impedance, which makes it useful for applications where the input signal needs to be amplified. Overall, the CA3081 is a versatile transistor that can be used in a wide range of electronic circuits and systems.
The CA3081 is a bipolar transistor (BJT) from Rochester Electronics LLC, packaged in a PDIP-16 format. As a BJT, it's a type of semiconductor component that can be used for amplification, switching, or voltage regulation.
Some key features of the CA3081 include:
Please note that specific details may vary depending on the manufacturer's documentation.
The package type of CA3081 is PDIP-16.
The manufacturer of the CA3081 is Rochester Electronics LLC, a US-based electronic components distributor and provider of excess and obsoleted semiconductors.
The equivalent products of CA3081 are:
Please note that these equivalents may have slight variations in specifications or packaging, but they serve the same functional purpose as the CA3081.
Product Category | Bipolar Transistors - BJT | Transistor Polarity | NPN |
---|---|---|---|
Configuration | Hepta | Collector- Emitter Voltage VCEO Max | 16 V |
Collector- Base Voltage VCBO | 20 V | Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 100 mA | Pd - Power Dissipation | 500 mW |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 125 C |
DC Collector/Base Gain hfe Min | 30 at 30 mA, 500 mV | Height | 4.95 mm |
Length | 19.68 mm | Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
Width | 7.11 mm | Unit Weight | 0.057419 oz |
Package/Case | PDIP-16 |
1.Q: What are some related parts to the MS-001BB NPN transistor array?
A: Similar parts include the ULN2003 (Darlington array) or the MC1413, but these are Darlington types. For exact equivalents, check Renesas/Intersil’s product portfolio.
2.Q: What is the typical DC current gain (hFE) of the MS-001BB?
A: The minimum hFE is 30 at 30mA collector current and 500mV VCE. Actual gain may vary based on operating conditions.
3.Q: What is the thermal resistance of the MS-001BB in PDIP-16 package?
A: The datasheet should specify the exact θJA (Junction-to-Ambient) value, but typical thermal resistance for PDIP packages ranges between 80-100°C/W.
4.Q: What are the recommended operating conditions for the MS-001BB?
A: Recommended conditions: Collector current (IC) ≤ 100mA, collector-emitter voltage (VCE) ≤ 16V, and ambient temperature within -55°C to +125°C.
5.Q: What are the absolute maximum ratings for the MS-001BB transistor array?
A: Absolute max ratings: VCEO = 16V, VCBO = 20V, VEBO = 5V, IC = 100mA, power dissipation = 500mW, and operating temperature range of -55°C to +125°C.
6.Q: What are the typical applications for the MS-001BB NPN transistor array?
A: Common applications include signal amplification, switching circuits, logic interfaces, and driver stages in industrial, automotive, and consumer electronics.
7.Q: What are the key features of the Rochester Electronics LLC MS-001BB NPN transistor array?
A: Key features include: Hepta (7-element) NPN configuration, 16V V(BR)CEO, 100mA max collector current, 500mW power dissipation, and a wide operating temperature range (-55°C to +125°C).
8.Q: What is the pinout configuration of the Rochester Electronics LLC GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY (MS-001BB)?
A: The device is a 7-element NPN transistor array in a PDIP-16 package. Each transistor shares a common emitter, with individual base and collector pins. Refer to the datasheet for the exact pinout diagram.
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