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CA3081

In Stock: 4,532

Powerful BJTs for amplifying audio signals, driving speakers, and switching circuits

CA3081 Information

Description

The CA3081 is a bipolar junction transistor (BJT) from Rochester Electronics LLC, packaged in a PDIP-16 format. It's a general-purpose transistor suitable for various applications. As an NPN transistor, the CA3081 can be used as a switch, amplifier, or voltage regulator. Its characteristics make it suitable for use in digital and analog circuits, including audio amplifiers, power supplies, and motor control systems. The CA3081 has a high current gain (hFE) of around 100-200, making it suitable for applications where high current is required. It also has a low input impedance, which makes it useful for applications where the input signal needs to be amplified. Overall, the CA3081 is a versatile transistor that can be used in a wide range of electronic circuits and systems.

Features

The CA3081 is a bipolar transistor (BJT) from Rochester Electronics LLC, packaged in a PDIP-16 format. As a BJT, it's a type of semiconductor component that can be used for amplification, switching, or voltage regulation.

Some key features of the CA3081 include:

  • High current gain
  • Low input and output capacitance
  • High frequency response
  • Compatible with various applications such as audio, power supplies, and motor control

Please note that specific details may vary depending on the manufacturer's documentation.

Package

The package type of CA3081 is PDIP-16.

Manufacturer

The manufacturer of the CA3081 is Rochester Electronics LLC, a US-based electronic components distributor and provider of excess and obsoleted semiconductors.

Equivalent

The equivalent products of CA3081 are:

  • NTE5101
  • Fairchild FC3061
  • Motorola MC3401A
  • Texas Instruments SN75421

Please note that these equivalents may have slight variations in specifications or packaging, but they serve the same functional purpose as the CA3081.

Specifications

Product Category Bipolar Transistors - BJT Transistor Polarity NPN
Configuration Hepta Collector- Emitter Voltage VCEO Max 16 V
Collector- Base Voltage VCBO 20 V Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 100 mA Pd - Power Dissipation 500 mW
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 125 C
DC Collector/Base Gain hfe Min 30 at 30 mA, 500 mV Height 4.95 mm
Length 19.68 mm Product Type BJTs - Bipolar Transistors
Subcategory Transistors Technology Si
Width 7.11 mm Unit Weight 0.057419 oz
Package/Case PDIP-16

CA3081 FAQs

1.Q: What are some related parts to the MS-001BB NPN transistor array?

A: Similar parts include the ULN2003 (Darlington array) or the MC1413, but these are Darlington types. For exact equivalents, check Renesas/Intersil’s product portfolio.

2.Q: What is the typical DC current gain (hFE) of the MS-001BB?

A: The minimum hFE is 30 at 30mA collector current and 500mV VCE. Actual gain may vary based on operating conditions.

3.Q: What is the thermal resistance of the MS-001BB in PDIP-16 package?

A: The datasheet should specify the exact θJA (Junction-to-Ambient) value, but typical thermal resistance for PDIP packages ranges between 80-100°C/W.

4.Q: What are the recommended operating conditions for the MS-001BB?

A: Recommended conditions: Collector current (IC) ≤ 100mA, collector-emitter voltage (VCE) ≤ 16V, and ambient temperature within -55°C to +125°C.

5.Q: What are the absolute maximum ratings for the MS-001BB transistor array?

A: Absolute max ratings: VCEO = 16V, VCBO = 20V, VEBO = 5V, IC = 100mA, power dissipation = 500mW, and operating temperature range of -55°C to +125°C.

6.Q: What are the typical applications for the MS-001BB NPN transistor array?

A: Common applications include signal amplification, switching circuits, logic interfaces, and driver stages in industrial, automotive, and consumer electronics.

7.Q: What are the key features of the Rochester Electronics LLC MS-001BB NPN transistor array?

A: Key features include: Hepta (7-element) NPN configuration, 16V V(BR)CEO, 100mA max collector current, 500mW power dissipation, and a wide operating temperature range (-55°C to +125°C).

8.Q: What is the pinout configuration of the Rochester Electronics LLC GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY (MS-001BB)?

A: The device is a 7-element NPN transistor array in a PDIP-16 package. Each transistor shares a common emitter, with individual base and collector pins. Refer to the datasheet for the exact pinout diagram.

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