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G3 SiC MOSFET with 900V voltage rating and 280mOhm on-state resistance
TO-247-3Manufacturer:
Mfr.Part #:
C3M0280090D
Datasheet:
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
11.5A (Tc)
EDA/CAD Models:
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The C3M0280090D is a high-voltage, high-speed N-channel enhancement mode power MOSFET from Wolfspeed. It features a maximum drain-source voltage of 900V and continuous drain current of 28A, making it suitable for various high-power applications. This MOSFET has low on-resistance, high avalanche ruggedness, and fast switching speeds, allowing it to efficiently handle high-frequency switching and high-voltage operation. Its TO-247-3 package provides a compact and reliable design. The C3M0280090D is ideal for use in power supplies, motor drives, UPS systems, induction heating, welding equipment, photovoltaic inverters, switched-mode power supplies, resonant converters, and electric vehicle charging stations.
The C3M0280090D is a high voltage, high speed, N-channel enhancement mode power MOSFET with the following features:
This MOSFET is suitable for various high-power applications, including power supplies and motor control.
The package type of C3M0280090D is TO-247-3, which is a 3-pin package with a tab for heat dissipation.
The C3M0280090D has a 3-pin (3+Tab) package, with the following functions:
The tab is connected to the source pin.
The manufacturer of the C3M0280090D is Wolfspeed. Wolfspeed is a well-known company that specializes in manufacturing power electronics components, including MOSFETs, IGBTs, and SiC devices. They are currently part of the Cree Company, which is a leading innovator of silicon carbide (SiC) technology for power and radio-frequency applications. Wolfspeed's products cater to various industries such as automotive, industrial, and renewable energy, offering high-performance solutions for power systems and equipment.
The application areas of C3M0280090D are:
Based on the specifications, some equivalent products to C3M0280090D are:
These MOSFETs have similar voltage and current ratings, making them suitable alternatives for applications requiring high power and speed.
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 900 V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 360mOhm @ 7.5A, 15V | Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 15 V | Vgs (Max) | +18V, -8V |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 600 V | FET Feature | - |
Power Dissipation (Max) | 54W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | C3M0280090 |
Pin Count | 3 | Released Date | Mar 29, 2017 |
Last Modified Date | Mar 7, 2023 4:10 PM UTC | Package/Case | TO-247-3 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $4.188 | $4.19 |
10+ | $4.096 | $40.96 |
30+ | $4.035 | $121.05 |
90+ | $3.973 | $357.57 |
The prices above are for reference only.
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