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C3M0280090D +BOM

G3 SiC MOSFET with 900V voltage rating and 280mOhm on-state resistance

C3M0280090D Information

Description

The C3M0280090D is a high-voltage, high-speed N-channel enhancement mode power MOSFET from Wolfspeed. It features a maximum drain-source voltage of 900V and continuous drain current of 28A, making it suitable for various high-power applications. This MOSFET has low on-resistance, high avalanche ruggedness, and fast switching speeds, allowing it to efficiently handle high-frequency switching and high-voltage operation. Its TO-247-3 package provides a compact and reliable design. The C3M0280090D is ideal for use in power supplies, motor drives, UPS systems, induction heating, welding equipment, photovoltaic inverters, switched-mode power supplies, resonant converters, and electric vehicle charging stations.

Features

The C3M0280090D is a high voltage, high speed, N-channel enhancement mode power MOSFET with the following features:

  • Maximum drain-source voltage of 900V
  • Continuous drain current of 28A
  • Low on-resistance (RDS(on))
  • High avalanche ruggedness
  • Fast switching speeds

This MOSFET is suitable for various high-power applications, including power supplies and motor control.

Package

The package type of C3M0280090D is TO-247-3, which is a 3-pin package with a tab for heat dissipation.

Pinout

The C3M0280090D has a 3-pin (3+Tab) package, with the following functions:

  • Pin 1: Drain (D)
  • Pin 2: Source (S)
  • Pin 3: Gate (G)

The tab is connected to the source pin.

Manufacturer

The manufacturer of the C3M0280090D is Wolfspeed. Wolfspeed is a well-known company that specializes in manufacturing power electronics components, including MOSFETs, IGBTs, and SiC devices. They are currently part of the Cree Company, which is a leading innovator of silicon carbide (SiC) technology for power and radio-frequency applications. Wolfspeed's products cater to various industries such as automotive, industrial, and renewable energy, offering high-performance solutions for power systems and equipment.

Applications

The application areas of C3M0280090D are:

  • Power supplies
  • Motor drives
  • UPS systems
  • Induction heating
  • Welding equipment
  • Photovoltaic inverters
  • Switched-mode power supplies
  • Resonant converters
  • Electric vehicle charging stations

Equivalent

Based on the specifications, some equivalent products to C3M0280090D are:

  • STP36NF80
  • IRF840
  • FET101N90K
  • NXP BUK280-50A

These MOSFETs have similar voltage and current ratings, making them suitable alternatives for applications requiring high power and speed.

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 15 V Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 600 V FET Feature -
Power Dissipation (Max) 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number C3M0280090
Pin Count 3 Released Date Mar 29, 2017
Last Modified Date Mar 7, 2023 4:10 PM UTC Package/Case TO-247-3

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Ratings and Reviews

More
I
I**h 09/17/2024

Everything came! Thank you seller! I did not check at work, but i trust the seller! Not the first time i ordered!

15
N
N**? 04/18/2023

Everything has come, sfor)

17
v
v**n 06/18/2020

The order is received, the performance did not check.

10

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