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BUK951R9-40E,127 +BOM

N-Channel 40 V 120A (Tc) 349W (Tc) Through Hole TO-220AB

Manufacturer:

NXP Semiconductors
Mfr.Part #:

BUK951R9-40E,127
Datasheet:

BUK951R9-40E,127 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
Current - Continuous Drain (Id) @ 25°C:

120A (Tc)
EDA/CAD Models:

Request Free CAD Models for BUK951R9-40E,127

BUK951R9-40E,127 Information

Avaq Semiconductor offers the highly versatile and reliable BUK951R9-40E,127 driver, produced by NXP Semiconductors. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the BUK951R9-40E,127.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	120 nC @ 5 V
Vgs (Max)	±10V	Input Capacitance (Ciss) (Max) @ Vds	16400 pF @ 25 V
Power Dissipation (Max)	349W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	BUK95
Package/Case	TO-220-3