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BU52012NVX-TR +BOM

High-precision hall sensor for precise position detection and contro

BU52012NVX-TR Information

General Description

Product BU52012NVX-TR is a highly reliable Hall Effect Sensor with a minimum sensitivity of 0.6mT and a maximum sensitivity of 5mT. This sensor operates within a voltage range of 0.20-1.60V and is designed with CMOS technology for optimal performance. The sensor is encased in a durable plastic/epoxy housing, making it suitable for various industrial applications

ROHM Semiconductor Inventory

Key Features

  • BU52012NVX-TR features advanced power management
  • It has a high efficiency synchronous rectifier
  • Offers a wide input voltage range
  • Includes overcurrent and overtemperature protection
  • Compact size with low power dissipation
  • Designed for applications requiring high power density

Application

  • Automotive electronics
  • Industrial control systems
  • Robotics and automation
  • Power management
  • Medical equipment
  • Consumer electronics
  • Communications equipment
  • Military and aerospace applications
  • Smart grid technology
  • Renewable energy systems

Specifications

Product Category Board Mount Hall Effect / Magnetic Sensors Type Unipolar
Operating Supply Current 3.5 uA Maximum Output Current +/- 500 mA
Operating Point Min/Max 3 mT to 5 mT Release Point Min/Max (Brp) 0.6 mT to 2.1 mT
Operating Supply Voltage 1.8 V Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Output Type CMOS Pd - Power Dissipation 2.049 W
Product Type Hall Effect / Magnetic Sensors Factory Pack Quantity 5000
Subcategory Sensors Supply Voltage - Max 3.6 V
Supply Voltage - Min 1.65 V Termination Style SMD/SMT
Part # Aliases BU52012NVX Unit Weight 0.001178 oz
Package/Case UDFN-4

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