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See Technical Specifications

BSS84XHZGG2CR +BOM

P-Channel 60 V 230mA (Ta) 1W (Ta) Surface Mount DFN1010-3W

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

BSS84XHZGG2CR
Datasheet:

BSS84XHZGG2CR Datasheet (PDF)
Series:

Automotive, AEC-Q101
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
EDA/CAD Models:

Request Free CAD Models for BSS84XHZGG2CR

BSS84XHZGG2CR Information

General Description

Thanks to its unique features, the BSS84XHZG MOSFET enables the miniaturization of automotive components, meeting the demands of high-quality and compactness in electronic control units (ECUs) and advanced driver-assistance system (ADAS) camera modules. This opens up new possibilities for designing innovative and space-saving automotive electronics, contributing to the development of more advanced and efficient vehicles

Key Features

Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package (1.0×1.0×0.4mm)
Side wettable Flanks for automated optical solder inspection (AOI). Tin-plated 100% solderable side pads guarantees Min.125μm
AEC-Q101 qualified

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	230mA (Ta)
Rds On (Max) @ Id, Vgs	5.3Ohm @ 230mA, 10V	Vgs(th) (Max) @ Id	2.5V @ 100µA
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	34 pF @ 30 V
FET Feature	-	Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSS84	Package/Case	DFN1010-3W