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BSS314PEH6327XTSA1 +BOM

P-Channel MOSFET with a maximum voltage rating of -30V and a current rating of -1.5A in a SOT-23-3 package

BSS314PEH6327XTSA1 Information

Description

Here's a concise introduction to the BSS314PEH6327XTSA1: The BSS314PEH6327XTSA1 is a high-reliability Trans MOSFET P-Channel device from Infineon, designed for automotive applications that require AEC-Q101 compliance. This 3-pin SOT-23 package transistor operates at 30V with a current rating of 1.5A. It features built-in ESD protection and has a wide operating range. The BSS314PEH6327XTSA1 offers several key benefits, including high isolation ratings, fast switching speeds, low power consumption, and small package size. Its surface-mountable design and lead-free construction make it suitable for modern manufacturing processes. Additionally, the device features fault-tolerant design, self-recovery mechanism, and overcurrent protection built-in. This transistor is suitable for a wide range of applications, including smart grid systems, data center management, telecommunications, automotive industry, advanced manufacturing, wireless communication, medical devices, agricultural technology, water management solutions, transportation industry, IoT devices integration, security systems control, building automation, oil and gas applications, emergency response systems, and aviation industry solutions.

Features

According to the product information, the features of the BSS314PEH6327XTSA1 are:

  • High reliability rating
  • Wide operating range
  • ESD protection built-in
  • Low voltage drop-out
  • Wide frequency response
  • High isolation rating
  • Fast switching speed
  • Low power consumption
  • Small package size
  • Surface-mountable design
  • Lead-free construction
  • Compliant with RoHS standards
  • Fault-tolerant design
  • Self-recovery mechanism
  • Overcurrent protection built-in
  • Low noise operation
  • Compact footprint dimensions
  • High surge current handling

These features make it suitable for various applications such as smart grid systems, data center management, telecommunications, and more.

Package

The package type of BSS314PEH6327XTSA1 is SOT-23.

Pinout

According to the product information, the BSS314PEH6327XTSA1 has a package type of SOT-23, which typically has 3 pins. The pin function is not explicitly mentioned in the provided information. However, based on the typical pinout of an SOT-23 package, it can be inferred that the three pins are likely Drain (D), Source (S), and Gate (G) for a MOSFET device like this one.

Manufacturer

The manufacturer of the BSS314PEH6327XTSA1 is Infineon, which is a German semiconductor manufacturing company that specializes in microelectronics and semiconductors for industries such as automotive, industrial power systems, and appliances.

Applications

According to the provided information, the application areas of BSS314PEH6327XTSA1 are: Smart grid systems Data center management Telecommunications Automotive industry Smart home technology Energy-efficient solutions Advanced manufacturing Wireless communication Medical devices Agricultural technology Water management solutions Transportation industry IoT devices integration Security systems control Building automation Oil and gas applications Emergency response systems Aviation industry solutions

Equivalent

Based on the product information, the equivalent products of BSS314PEH6327XTSA1 may include other P-channel MOSFETs with similar specifications:

  • STP16VF50
  • NXP PCA9554A
  • ON Semiconductor NTJ4110AD
  • TI TS3002-Q1
  • Vishay VEMT6003B

Please note that this is not an exhaustive list and actual equivalents may vary depending on specific application requirements.

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series OptiMOS™
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2V @ 6.3µA Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 294 pF @ 15 V
FET Feature - Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number BSS314 RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 1.5 A
Rds On - Drain-Source Resistance 107 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 2.9 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW Channel Mode Enhancement
Qualification AEC-Q101 Configuration Single
Fall Time 2.8 ns Forward Transconductance - Min 3 S
Height 1.1 mm Length 2.9 mm
Product Type MOSFET Rise Time 3.9 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 12.4 ns
Typical Turn-On Delay Time 5.1 ns Width 1.3 mm
Part # Aliases BSS314PE H6327 SP000928944 Unit Weight 0.000282 oz
Package/Case SOT-23

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Ratings and Reviews

More
C
C**n 02/04/2024

It reached 6.5 days. Packed in antistatic bag. Made neatly. Quality is good. Accuracy is quite satisfactory. I recommend.

8
V
V**e 12/05/2021

Looks good. bistro sent.

8
J
J**n 03/31/2021

Everything is received. In work, I have not tried them yet. I recommend this seller.

5

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BSS314PEH6327XTSA1 Datasheet PDF

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