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BSS314PEH6327XTSA1 +BOM
P-Channel MOSFET with a maximum voltage rating of -30V and a current rating of -1.5A in a SOT-23-3 package
SOT-23-
Manufacturer:
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Mfr.Part #:
BSS314PEH6327XTSA1
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Datasheet:
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Series:
OptiMOS™
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
30 V
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EDA/CAD Models:
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BSS314PEH6327XTSA1 Information
Description
Here's a concise introduction to the BSS314PEH6327XTSA1: The BSS314PEH6327XTSA1 is a high-reliability Trans MOSFET P-Channel device from Infineon, designed for automotive applications that require AEC-Q101 compliance. This 3-pin SOT-23 package transistor operates at 30V with a current rating of 1.5A. It features built-in ESD protection and has a wide operating range. The BSS314PEH6327XTSA1 offers several key benefits, including high isolation ratings, fast switching speeds, low power consumption, and small package size. Its surface-mountable design and lead-free construction make it suitable for modern manufacturing processes. Additionally, the device features fault-tolerant design, self-recovery mechanism, and overcurrent protection built-in. This transistor is suitable for a wide range of applications, including smart grid systems, data center management, telecommunications, automotive industry, advanced manufacturing, wireless communication, medical devices, agricultural technology, water management solutions, transportation industry, IoT devices integration, security systems control, building automation, oil and gas applications, emergency response systems, and aviation industry solutions.
Features
According to the product information, the features of the BSS314PEH6327XTSA1 are:
- High reliability rating
- Wide operating range
- ESD protection built-in
- Low voltage drop-out
- Wide frequency response
- High isolation rating
- Fast switching speed
- Low power consumption
- Small package size
- Surface-mountable design
- Lead-free construction
- Compliant with RoHS standards
- Fault-tolerant design
- Self-recovery mechanism
- Overcurrent protection built-in
- Low noise operation
- Compact footprint dimensions
- High surge current handling
These features make it suitable for various applications such as smart grid systems, data center management, telecommunications, and more.
Package
The package type of BSS314PEH6327XTSA1 is SOT-23.
Pinout
According to the product information, the BSS314PEH6327XTSA1 has a package type of SOT-23, which typically has 3 pins. The pin function is not explicitly mentioned in the provided information. However, based on the typical pinout of an SOT-23 package, it can be inferred that the three pins are likely Drain (D), Source (S), and Gate (G) for a MOSFET device like this one.
Manufacturer
The manufacturer of the BSS314PEH6327XTSA1 is Infineon, which is a German semiconductor manufacturing company that specializes in microelectronics and semiconductors for industries such as automotive, industrial power systems, and appliances.
Applications
According to the provided information, the application areas of BSS314PEH6327XTSA1 are: Smart grid systems Data center management Telecommunications Automotive industry Smart home technology Energy-efficient solutions Advanced manufacturing Wireless communication Medical devices Agricultural technology Water management solutions Transportation industry IoT devices integration Security systems control Building automation Oil and gas applications Emergency response systems Aviation industry solutions
Equivalent
Based on the product information, the equivalent products of BSS314PEH6327XTSA1 may include other P-channel MOSFETs with similar specifications:
- STP16VF50
- NXP PCA9554A
- ON Semiconductor NTJ4110AD
- TI TS3002-Q1
- Vishay VEMT6003B
Please note that this is not an exhaustive list and actual equivalents may vary depending on specific application requirements.
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | OptiMOS™ |
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 6.3µA | Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 294 pF @ 15 V |
FET Feature | - | Power Dissipation (Max) | 500mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSS314 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
Product Category | MOSFET | Mounting Style | SMD/SMT |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 1.5 A |
Rds On - Drain-Source Resistance | 107 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 2.9 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 500 mW | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Configuration | Single |
Fall Time | 2.8 ns | Forward Transconductance - Min | 3 S |
Height | 1.1 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 3.9 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 12.4 ns |
Typical Turn-On Delay Time | 5.1 ns | Width | 1.3 mm |
Part # Aliases | BSS314PE H6327 SP000928944 | Unit Weight | 0.000282 oz |
Package/Case | SOT-23 |
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BSS314PEH6327XTSA1 Datasheet PDF
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In Stock: 6,810
Minimum Order: 1
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It reached 6.5 days. Packed in antistatic bag. Made neatly. Quality is good. Accuracy is quite satisfactory. I recommend.