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BSS169H6327XTSA1 +BOM

MOSFET in SOT-23-3 package, featuring N-channel design, supporting voltages up to 100V and currents up to 90mA

BSS169H6327XTSA1 Information

Description

The BSS169H6327XTSA1 is an N-Channel Power MOSFET from Infineon, designed for low-voltage and low-on-resistance switching applications. It features a high-performance microcontroller with advanced memory storage capacity and superior processing speed. This device has a compact design footprint and efficient thermal dissipation, making it suitable for battery-powered devices, circuit protection, signal processing, motor drive control, and load switches. Its advanced power management capabilities ensure reliable operation in various applications. The BSS169H6327XTSA1 is packaged in a SOT23 (3-pin) package, offering high-temperature stability, compact design, and efficient thermal dissipation. It operates at 100V with a maximum current of 170mA and has a power dissipation of 360mW at an operating temperature of Ta. Overall, the BSS169H6327XTSA1 is a reliable and efficient Power MOSFET suitable for various applications where low voltage and low on-resistance switching are required.

Features

According to the product information, the features of the BSS169H6327XTSA1 are:

  • High-performance microcontroller
  • Advanced memory storage capacity
  • Superior processing speed
  • High-temperature stability
  • Compact design footprint
  • Efficient thermal dissipation
  • Low noise emission level
  • Compact and lightweight design
  • Robust mechanical structure
  • Advanced power management
  • Superior signal-to-noise ratio
  • High-reliability construction
  • Advanced thermal management
  • High-speed data transfer rate
  • Reliable power supply operation
  • Fast switching frequency
  • Low power consumption
  • Reliable circuit operation

These features are suitable for various applications such as low voltage and low on-resistance switching, battery-powered devices, circuit protection, signal processing, motor drive control, and load switches.

Package

The package type of BSS169H6327XTSA1 is SOT23 (3-Pin).

Pinout

According to the product information, the package type for BSS169H6327XTSA1 is SOT23 (3-Pin) - sot-23/. This indicates that the component has a pin count of 3.

As for the function of each pin, it's not explicitly stated in the provided information. However, based on the typical pinout configuration of an N-channel MOSFET in a SOT23 package, we can infer that:

  • Pin 1 is likely the source (S) terminal
  • Pin 2 is likely the drain (D) terminal
  • Pin 3 is likely the gate (G) terminal

Please note that this is an educated guess and may not be accurate without further information from the manufacturer or a detailed datasheet.

Manufacturer

The manufacturer of the BSS169H6327XTSA1 is Infineon.

Applications

Based on the product information, the application areas of BSS169H6327XTSA1 are:

  • Low voltage and low on-resistance switching applications
  • Battery-powered devices
  • Circuit protection
  • Signal processing
  • Motor drive control
  • Load switches

Equivalent

Based on the product information, I would recommend the following equivalent products:

  • STMicroelectronics' STP16NF06L
  • ON Semiconductor's NCS3602G
  • Texas Instruments' TIP41C

These products share similar characteristics with BSS169H6327XTSA1, such as high-performance, low voltage, and low on-resistance switching. However, please note that the exact equivalent product may depend on specific application requirements and specifications.

Specifications

RHoS yes PBFree yes
HalogenFree yes Product Category MOSFET
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 170 mA
Rds On - Drain-Source Resistance 2.9 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.9 V Qg - Gate Charge 2.1 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 360 mW Channel Mode Depletion
Qualification AEC-Q101 Configuration Single
Fall Time 27 ns Forward Transconductance - Min 0.2 S
Height 1.1 mm Length 2.9 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 2.7 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type SIPMOS Small Signal Transistor Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 2.9 ns Width 1.3 mm
Part # Aliases BSS169 H6327 SP000702572 Unit Weight 0.001199 oz
Package/Case SOT23

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Ratings and Reviews

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E
E**a 08/20/2020

Delivery to stavropol 14 days, packed well, ordered 2 bms. before that ordered 1 pc. 3.03.19 still goes, when ordering always see the terms of delivery.

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BSS169H6327XTSA1 Datasheet PDF

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