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Power transistor
SOT23-3Manufacturer:
Diodes Incorporated
Mfr.Part #:
BSS138TA
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
3
Reach Compliance Code:
compliant
EDA/CAD Models:
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The BSS138TA is a Trans MOSFET N-CH 50V 0.2A from Diodes Incorporated, packaged in SOT-23-3. This component is designed for general-purpose applications where a low-voltage, high-frequency device is required. As an N-channel power transistor, the BSS138TA can be used to switch or amplify signals up to 50 volts and 0.2 amps of current. Its small package size (SOT-23-3) makes it suitable for use in compact designs where space is limited. The BSS138TA's features include a high-frequency response, low input capacitance, and a low leakage current. It can be used in a variety of applications such as power supplies, motor control circuits, and audio amplifiers.
According to the product information, the package type of BSS138TA is SOT-23-3.
The BSS138TA is a N-channel power MOSFET with a 3-pin package (SOT-23-3). The pins are:
This device is designed for general-purpose switching and amplification applications, such as motor control, LED drivers, and audio amplifiers.
The manufacturer of the BSS138TA is Diodes Incorporated, a leading global manufacturer and supplier of high-quality electronic components.
The BSS138TA is a N-channel power MOSFET suitable for general-purpose switching applications. Its small size, low voltage drop, and high current handling make it ideal for use in portable electronics, such as smartphones, tablets, and laptops. It can also be used in other applications like motor control, LED lighting, and power supplies.
Based on the product information, the equivalent products of BSS138TA are:
These transistors have similar specifications and package types (SOT-23) to the BSS138TA.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Pin Count | 3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 78 Weeks |
Configuration | SINGLE | DS Breakdown Voltage-Min | 50 V |
Drain Current-Max (ID) | 0.2 A | Drain-source On Resistance-Max | 3.5 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 8 pF |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 0.36 W |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Package/Case | SOT23-3 |
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