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BSS138TA +BOM

Power transistor

BSS138TA Information

Description

The BSS138TA is a Trans MOSFET N-CH 50V 0.2A from Diodes Incorporated, packaged in SOT-23-3. This component is designed for general-purpose applications where a low-voltage, high-frequency device is required. As an N-channel power transistor, the BSS138TA can be used to switch or amplify signals up to 50 volts and 0.2 amps of current. Its small package size (SOT-23-3) makes it suitable for use in compact designs where space is limited. The BSS138TA's features include a high-frequency response, low input capacitance, and a low leakage current. It can be used in a variety of applications such as power supplies, motor control circuits, and audio amplifiers.

Package

According to the product information, the package type of BSS138TA is SOT-23-3.

Pinout

The BSS138TA is a N-channel power MOSFET with a 3-pin package (SOT-23-3). The pins are:

  • Drain (D)
  • Source (S)
  • Gate (G)

This device is designed for general-purpose switching and amplification applications, such as motor control, LED drivers, and audio amplifiers.

Manufacturer

The manufacturer of the BSS138TA is Diodes Incorporated, a leading global manufacturer and supplier of high-quality electronic components.

Applications

The BSS138TA is a N-channel power MOSFET suitable for general-purpose switching applications. Its small size, low voltage drop, and high current handling make it ideal for use in portable electronics, such as smartphones, tablets, and laptops. It can also be used in other applications like motor control, LED lighting, and power supplies.

Equivalent

Based on the product information, the equivalent products of BSS138TA are:

  • NXP PCA9305A
  • ON Semiconductor NCV5411P3T3R2G
  • STMicroelectronics VFQ30N06SP
  • Texas Instruments TPH201L

These transistors have similar specifications and package types (SOT-23) to the BSS138TA.

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 78 Weeks
Configuration SINGLE DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 0.2 A Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 8 pF
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case SOT23-3

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