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BSS138DW-7-F +BOM

Transistor MOSFET Array Dual N-CH 50V 200mA 6-Pin SOT-363 T/R

BSS138DW-7-F Information

Description

Here's a concise introduction to the BSS138DW-7-F: The BSS138DW-7-F is a small signal field-effect transistor (FET) from Diodes Incorporated, designed for high-speed switching applications in portable electronic devices. This N-channel FET features low ON resistance, threshold voltage, and leakage current, making it suitable for power management systems, wireless communication systems, and other applications where space efficiency and fast switching are crucial. The BSS138DW-7-F is packaged in a compact SC-70 package, allowing for minimal board space usage. Its RoHS compliance ensures environmental sustainability. With its low gate voltage drive requirement, this FET can be easily controlled by microcontrollers or other devices. The device's high-speed switching capability and low leakage current make it an excellent choice for applications that demand fast response times and low power consumption.

Features

According to the product information, the features of the BSS138DW-7-F are:

  • Low ON resistance: 0.5 ohms
  • Low threshold voltage: 0.8V
  • Small package size: SC-70
  • Low gate voltage drive
  • High-speed switching
  • Low leakage current
  • RoHS compliant

These features make it suitable for various applications such as portable electronic devices, smartphones and tablets, laptops and notebooks, wireless communication systems, power management systems, LED lighting systems, automotive electronics, industrial control systems, medical devices, and sensor interfaces.

Package

The package type of BSS138DW-7-F is SOT-363-6, which is a small plastic package with a footprint size of SC-70.

Manufacturer

The manufacturer of the BSS138DW-7-F is Diodes Incorporated, a semiconductor company that designs, manufactures, and sells semiconductors and passive components for various industries.

Applications

According to the product information, the application areas of BSS138DW-7-F are:

  • Portable electronic devices
  • Smartphones and tablets
  • Laptops and notebooks
  • Wireless communication systems
  • Power management systems
  • LED lighting systems
  • Automotive electronics
  • Industrial control systems
  • Medical devices
  • Sensor interfaces

Equivalent

The equivalent products of BSS138DW-7-F are:

  • NXP PCA9300A
  • ON Semiconductor NCV5411P
  • STMicroelectronics VF2465S3V6
  • Texas Instruments TPH6002DAR
  • Vishay Siliconix VSZ4P10T3-EH

Please note that equivalent products may have slightly different specifications or packaging.

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 6 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 78 Weeks
Additional Feature HIGH RELIABILITY Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 3.5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF JESD-30 Code R-PDSO-G6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 2 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W Qualification Status Not Qualified
Reference Standard AEC-Q101 Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Package/Case TSSOP-6

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