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MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W
SOT23-3Manufacturer:
Diodes Incorporated
Mfr.Part #:
BSS123-7-F
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
3
Reach Compliance Code:
compliant
EDA/CAD Models:
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The Diodes Inc. BSS123-7-F is an N-channel power MOSFET designed for low-power applications. It features a voltage rating of 100V, current rating of 170mA, and power dissipation of 330mW. This device is suitable for signal amplification circuits, sensor circuits, switching circuits in low-power applications, battery management systems, and voltage regulation circuits. The BSS123-7-F has a compact SOT-23-3 package, making it ideal for space-constrained designs. Its low Rds(on) of 4 Ohm at 10mA and 10V makes it suitable for applications where power consumption is critical. With its high voltage rating and moderate current handling, this device can be used in a variety of applications that require a reliable and efficient switching solution.
The BSS123-7-F features:
The package type of BSS123-7-F is SOT-23.
The BSS123-7-F is a SOT-23-3 package N-channel power MOSFET from Diodes Inc. It has three pins:
The BSS123-7-F is designed for use in signal amplification circuits, sensor circuits, switching circuits in low-power applications, battery management systems, and voltage regulation circuits.
The manufacturer of the BSS123-7-F is Diodes Inc.
The BSS123-7-F is suitable for signal amplification circuits, sensor circuits, low-power switching circuits, battery management systems, and voltage regulation circuits. Its N-channel MOSFET characteristics make it a good fit for applications where high input impedance and low output impedance are required.
Based on the product information, the equivalent products of BSS123-7-F are likely to be other N-channel MOSFETs with similar specifications, such as:
These devices have similar voltage and current ratings, making them suitable alternatives for applications like signal amplification, sensor circuits, and low-power switching.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Pin Count | 3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 84 Weeks |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 0.17 A | Drain-source On Resistance-Max | 6 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 6 pF |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.3 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Package/Case | SOT23-3 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
20+ | $0.029 | $0.58 |
200+ | $0.023 | $4.60 |
600+ | $0.020 | $12.00 |
3000+ | $0.018 | $54.00 |
9000+ | $0.016 | $144.00 |
21000+ | $0.016 | $336.00 |
The prices above are for reference only.