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BSS123-7-F +BOM

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 0.2 W

BSS123-7-F Information

Description

The Diodes Inc. BSS123-7-F is an N-channel power MOSFET designed for low-power applications. It features a voltage rating of 100V, current rating of 170mA, and power dissipation of 330mW. This device is suitable for signal amplification circuits, sensor circuits, switching circuits in low-power applications, battery management systems, and voltage regulation circuits. The BSS123-7-F has a compact SOT-23-3 package, making it ideal for space-constrained designs. Its low Rds(on) of 4 Ohm at 10mA and 10V makes it suitable for applications where power consumption is critical. With its high voltage rating and moderate current handling, this device can be used in a variety of applications that require a reliable and efficient switching solution.

Features

The BSS123-7-F features:

  • N-Channel, 100V, 170mA (Ta), 300mW (Ta) surface mount SOT-23-3
  • Voltage - Rated: 100V
  • Power Dissipation: 330mW
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 10V
  • FET Type: N-Channel

Package

The package type of BSS123-7-F is SOT-23.

Pinout

The BSS123-7-F is a SOT-23-3 package N-channel power MOSFET from Diodes Inc. It has three pins:

  • Drain (D): This pin connects to the drain of the MOSFET.
  • Source (S): This pin connects to the source of the MOSFET and is typically connected to ground or a low voltage.
  • Gate (G): This pin connects to the gate of the MOSFET and is used to control the flow of current.

The BSS123-7-F is designed for use in signal amplification circuits, sensor circuits, switching circuits in low-power applications, battery management systems, and voltage regulation circuits.

Manufacturer

The manufacturer of the BSS123-7-F is Diodes Inc.

Applications

The BSS123-7-F is suitable for signal amplification circuits, sensor circuits, low-power switching circuits, battery management systems, and voltage regulation circuits. Its N-channel MOSFET characteristics make it a good fit for applications where high input impedance and low output impedance are required.

Equivalent

Based on the product information, the equivalent products of BSS123-7-F are likely to be other N-channel MOSFETs with similar specifications, such as:

  • STP16NF50L (STMicroelectronics)
  • IRF510N (International Rectifier)
  • 2N7002 (ON Semiconductor)

These devices have similar voltage and current ratings, making them suitable alternatives for applications like signal amplification, sensor circuits, and low-power switching.

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 84 Weeks
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.17 A Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Package/Case SOT23-3

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