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Reel-packaged transistor suitable for high-current applications
BSP250,115
nrnd
The Nexperia BSP250,115 is a Trans MOSFET (Terminal-Type Power MOSFET) with the following key characteristics:
This device is suitable for switching applications where high current and low voltage are required. Its compact footprint, in the SC-73-4 package, makes it suitable for a variety of industries such as telecommunications, automotive, and industrial control systems.
The BSP250,115 can be used as a logic level mosfet or a standard power MOSFET, depending on the application.
According to the provided product information, the features of BSP250,115 are:
These features make it suitable for electronic circuits or devices that require a high-voltage, low-current switching element.
The package type of BSP250,115 is SC-73-4, which is a 3-pin surface-mount device (SMD) with a tab (3+Tab) configuration.
According to the product information, the BSP250,115 has a package type of SC-73-4, which means it has a 4-pin (3+Tab) configuration. The pin count is therefore 4. The tabpin is used for thermal dissipation and is not electrically connected.
The 4 pins are likely:
This information can be inferred from the product description, which indicates it's a Trans MOSFET P-CH 30V 3A. The tabpin is a common feature in power MOSFETs and is designed to help dissipate heat generated during operation.
The manufacturer of the BSP250,115 is Nexperia. Nexperia is a leading global provider of semiconductor components, including MOSFETs, analog switches, and other power management devices. They are a well-established company with a strong reputation in the industry for producing high-quality products that meet the needs of various applications.
Source Content uid | BSP250,115 | Part Life Cycle Code | Not Recommended |
---|---|---|---|
Pin Count | 4 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Date Of Intro | 2017-02-01 |
Application | SWITCHING | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G4 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Element Material | SILICON | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V | Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 20 V | Power Dissipation (Max) | 1.65W (Ta) |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSP250 | Package/Case | SOT-223-3 |
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