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1200V 400A IGBT Module in a single package
ModuleManufacturer:
Mfr.Part #:
BSM400GA120DN2
Other Name:
BSM400GA120DN2HOSA1
Datasheet:
Product:
IGBT Silicon Modules
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
2.5 V
EDA/CAD Models:
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The Infineon BSM400GA120DN2 is a high-power IGBT module designed for demanding applications such as industrial motor drives, solar inverters, and electric vehicles. It features a voltage rating of 1200V, current rating of 400A, and power rating of 2700W. This module offers ultra-low loss, low noise, and high reliability, making it suitable for applications that require efficient energy conversion. The top-side cooling design allows for effective heat dissipation, ensuring reliable operation in harsh environments. The BSM400GA120DN2 is a chassis-mount module with an isolation voltage of 2500V, making it suitable for use in a wide range of industrial and commercial applications. Its high power density and compact design make it an attractive option for designers seeking to reduce system size while maintaining performance.
According to the product information, the features of the BSM400GA120DN2 IGBT Module are:
According to the product information, the package type of BSM400GA120DN2 is "Module" with a specific package type of "IGBT1".
According to Infineon's documentation, the BSM400GA120DN2 IGBT module has a 3-legged package with no defined pins. This type of package is commonly referred to as a "TO-247" or "SIP" (Single In-Line Package) format.
As an IGBT module, it does not have individual pin assignments like a discrete transistor would. Instead, the module's electrical connections are made through the terminals on the top and bottom of the package:
Keep in mind that this is an IGBT module, which means it has a built-in diode. The diode is connected internally between the collector and emitter terminals.
The manufacturer of the BSM400GA120DN2 is Infineon Technologies AG, a German-based semiconductor manufacturer that specializes in power semiconductors, microcontrollers, and security chips.
According to the product information, the application areas of BSM400GA120DN2 are:
Based on Infineon's product portfolio, equivalent products to BSM400GA120DN2 could be:
These IGBT modules share similar specifications, such as voltage rating (1200V), current rating (400A), and package type. However, please note that equivalent products may vary depending on the specific application and requirements.
Product Category: | IGBT Modules | Product: | IGBT Silicon Modules |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 1.2 kV |
Collector-Emitter Saturation Voltage: | 2.5 V | Continuous Collector Current at 25 C: | 550 A |
Gate-Emitter Leakage Current: | 400 nA | Pd - Power Dissipation: | 2700 W |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Packaging: | Tray | Height: | 36.5 mm |
Length: | 106.4 mm | Maximum Gate Emitter Voltage: | 20 V |
Mounting Style: | Chassis Mount | Product Type: | IGBT Modules |
Factory Pack Quantity: | 10 | Subcategory: | IGBTs |
Technology: | Si | Width: | 61.4 mm |
Part # Aliases: | SP000100728 BSM400GA120DN2HOSA1 | Package/Case | Module |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $202.134 | $202.13 |
30+ | $193.938 | $5,818.14 |
The prices above are for reference only.
I haven't tried it but it's in good shape