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See Technical Specifications

BSM200GA120DN2 +BOM

Single Switch IGBT Module rated for 1200V and 300A

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

BSM200GA120DN2
Other Name:

BSM200GA120DN2HOSA1
Datasheet:

BSM200GA120DN2 Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
Collector-Emitter Saturation Voltage:

2.5 V
EDA/CAD Models:

Request Free CAD Models for BSM200GA120DN2

Description

Here's a concise introduction to the Infineon BSM200GA120DN2 IGBT module: The Infineon BSM200GA120DN2 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial applications. With a maximum current rating of 300A and voltage rating of 1200V, it offers reliable performance in high-power applications such as motor drives, renewable energy systems, electric vehicles, power supplies, welding equipment, and more. Boasting low stray inductance and thermal resistance, this module provides efficient heat dissipation and minimizes switching losses. Its integrated gate driver ensures stable and predictable operation. Being RoHS compliant, it meets environmental sustainability standards. Overall, the BSM200GA120DN2 is a robust and reliable solution for high-power applications requiring robust and precise control.

Features

Based on the product information, the features of Infineon BSM200GA120DN2 are:

IGBT module
High power semiconductor device
1200V voltage rating
200A current rating
Designed for high power applications
Low stray inductance
Low thermal resistance
Integrated gate driver
RoHS compliant

These features make it suitable for various applications, including industrial motor drives, renewable energy systems, electric vehicles, and more.

Package

According to the product information, the package type of BSM200GA120DN2 is a "5-Pin 62MM Module".

Manufacturer

The manufacturer of the BSM200GA120DN2 is Infineon. Infineon is a German semiconductor manufacturer that specializes in power semiconductors, microcontrollers, and other electronic components for various industries such as industrial automation, automotive, and renewable energy.

Applications

According to the product information, the application areas of Infineon's BSM200GA120DN2 IGBT module are:

Industrial motor drives
Renewable energy systems
Electric vehicles
Power supplies
Welding equipment
Uninterruptible power supplies (UPS)
High-power inverter applications
Switched mode power supplies (SMPS)
Induction heating systems
Solar power inverters

Equivalent

Based on Infineon's product lineup, some equivalent products to BSM200GA120DN2 are:

BSM250GB120DN2
BSM300GB120DN2
BTS200H120D2
BTS300H120D2

These IGBT modules share similar specifications and applications with the BSM200GA120DN2.

Specifications

Product Category:	IGBT Modules	Product:	IGBT Silicon Modules
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.5 V	Continuous Collector Current at 25 C:	300 A
Gate-Emitter Leakage Current:	200 nA	Pd - Power Dissipation:	1550 W
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 150 C
Packaging:	Tray	Height:	36.5 mm
Length:	106.4 mm	Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Chassis Mount	Product Type:	IGBT Modules
Factory Pack Quantity:	10	Subcategory:	IGBTs
Technology:	Si	Width:	61.4 mm
Part # Aliases:	SP000100725 BSM200GA120DN2HOSA1	Unit Weight:	1 lb
Package/Case	Module

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