This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

BSD235NH6327XTSA1 +BOM

SOT-363-6 packaged N-channel MOSFET rated for 20V and 950mA

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

BSD235NH6327XTSA1
Datasheet:

BSD235NH6327XTSA1 Datasheet (PDF)
Series:

Automotive, AEC-Q101, OptiMOS™ 2
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
EDA/CAD Models:

Request Free CAD Models for BSD235NH6327XTSA1

Description

The BSD235NH6327XTSA1 is a N-channel MOSFET from Infineon, specifically designed for high-reliability power management applications. This device operates over a wide temperature range of -40°C to 150°C, with a voltage rating of 1000V and current rating of 950mA (30A). It features a low reverse recovery time of 18ns, making it suitable for fast-switching and high-frequency applications. The SOT-363 package measures only 2.5mm x 1.25mm x 0.35mm in size, allowing for compact designs. The MOSFET is optimized for high efficiency and reliability, with low power consumption making it an ideal solution for a range of applications including power supplies, motor drives, photovoltaic inverters, and more.

Features

According to the product information, the features of BSD235NH6327XTSA1 are:

High efficiency and reliability
Low power consumption
Temperature range: -40°C to 150°C
Current rating: 30A
Voltage rating: 1000V
Reverse recovery time: 18ns

Note that the package type is SOT-227, not SOT-363 as mentioned in the description.

Package

According to the product information, the package type of BSD235NH6327XTSA1 is SOT-363 (6-Pin).

Manufacturer

The manufacturer of the BSD235NH6327XTSA1 is Infineon.

Applications

According to the product information, the application areas of BSD235NH6327XTSA1 are:

Power management systems
Switch mode power supplies
Industrial motor drives
Uninterruptible power supplies
Photovoltaic inverters
Automotive applications
Wind turbine converters
Electric vehicle charging systems
High power lighting systems
Solar power systems

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	Automotive, AEC-Q101, OptiMOS™ 2
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	950mA	Rds On (Max) @ Id, Vgs	350mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1.6µA	Gate Charge (Qg) (Max) @ Vgs	0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	63pF @ 10V	Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSD235	RHoS	yes
PBFree	yes	HalogenFree	yes
Package/Case	SOT363