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See Technical Specifications

BSC037N08NS5 +BOM

Robust and durable MOSFET design for demanding industrial environments

Manufacturer:

INFINEON
Mfr.Part #:

BSC037N08NS5
Datasheet:

BSC037N08NS5 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

140 mJ
EDA/CAD Models:

Request Free CAD Models for BSC037N08NS5

BSC037N08NS5 Information

Description

The Infineon Technologies BSC037N08NS5 is a high-performance N-Channel TDSON-8-EP MOSFET designed for synchronous rectification applications. This SuperSO8 packaged device features optimized performance for high switching frequencies, reduced output capacitance and RDS(on) compared to previous generations. Key benefits include increased system efficiency, reduced switching and conduction losses, minimal paralleling required, and higher power density. Additionally, it offers low voltage overshoot capability. This MOSFET is an ideal solution for applications that require high-speed, low-loss, and high-power handling in a compact footprint.

Features

According to the product information, the features of BSC037N08NS5 are:

Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
RDS(on) reduction of up to 43% from previous generation
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot

Package

The package type of BSC037N08NS5 is SuperSO8 (5x6).

Pinout

The BSC037N08NS5 is a SuperSO8 (5x6) package N-channel MOSFET from Infineon Technologies.

Pin Count: 8 pins

Functions:

Drain (D)
Source (S)
Gate (G)
Source Lead (SL)
Drain Lead (DL)
VCC
GND
Shield (SH)

Please note that the pinout may vary depending on the specific application and usage.

Manufacturer

The manufacturer of the BSC037N08NS5 is Infineon Technologies.

Applications

The Infineon Technologies BSC037N08NS5 MOSFET is suitable for high-frequency synchronous rectification applications, such as:

Power supplies
DC-DC converters
Motor drives
LED lighting systems
Automotive electronics

Its features like low RDS(on), reduced output capacitance, and low voltage overshoot make it ideal for high-efficiency power conversion.

Equivalent

Based on Infineon's product portfolio, equivalent products to BSC037N08NS5 could be:

BSC036N06NS5
BSC035N04NS5
BSC034N03NS5

These MOSFETs share similar specifications and features with the BSC037N08NS5, including high current ratings, low RDS(on), and optimized performance for synchronous rectification. However, please note that exact equivalent products may vary depending on specific application requirements.

Specifications

Source Content uid	BSC037N08NS5	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	140 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	80 V
Drain Current-Max (ID)	22 A	Drain-source On Resistance-Max	0.0037 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	400 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	FLAT
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Package/Case	SUPERSO-8