This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

BSC032N04LSATMA1 +BOM

PK Infineon MOSFET BSC032N04LSATMA1

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

BSC032N04LSATMA1
Datasheet:

BSC032N04LSATMA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
EDA/CAD Models:

Request Free CAD Models for BSC032N04LSATMA1

BSC032N04LSATMA1 Information

Description

The BSC032N04LSATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies AG, designed for demanding applications in the automotive industry. This device features optimized switching characteristics, enhanced gate drive capability, low forward voltage drop, and high short-circuit and blocking voltage capabilities. With its RoHS-compliant design and high thermal cycling performance, this MOSFET is suitable for use in electric vehicle powertrains, battery management systems, power supplies, DC-DC converters, solar inverters, motion control systems, industrial automation, robotics, uninterruptible power supplies, and wind turbines. Its low switching losses and high efficiency make it an excellent choice for applications requiring high reliability and minimal energy consumption. Overall, the BSC032N04LSATMA1 is a reliable and efficient power MOSFET solution for demanding automotive and industrial applications.

Features

Based on the provided information, the features of the BSC032N04LSATMA1 are:

Optimized for low switching losses
Enhanced gate drive capability
Low forward voltage drop
High short circuit capability
High blocking voltage capability
High thermal cycling performance
RoHS-compliant
Designed for automotive applications

These features make it suitable for various applications such as electric vehicle powertrains, battery management systems, power supplies, DC-DC converters, solar inverters, motion control systems, industrial automation, robotics, uninterruptible power supplies, and wind turbines.

Package

The package type of BSC032N04LSATMA1 is TDSON EP-8, which is a 8-pin thermally enhanced power device package.

Manufacturer

The manufacturer of the BSC032N04LSATMA1 is Infineon Technologies AG, a German-based semiconductor company that specializes in the design, manufacture, and marketing of semiconductors and microcontrollers.

Applications

The application areas of the BSC032N04LSATMA1 are:

Electric vehicle powertrains
Battery management systems
Power supplies
DC-DC converters
Solar inverters
Motion control systems
Industrial automation
Robotics
Uninterruptible power supplies
Wind turbines

Equivalent

Based on Infineon's product portfolio, some equivalent products to BSC032N04LSATMA1 are:

IRF840
STP16NF60L
NXP BUK453-50A
ON Semi NPT4505L

These MOSFETs share similar characteristics such as high current rating, low voltage drop, and robust design. However, please note that the exact equivalent product may depend on specific application requirements.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	21A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 20 V
FET Feature	-	Power Dissipation (Max)	2.5W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSC032	RHoS	yes
PBFree	yes	HalogenFree	yes
Package/Case	TDSON-8