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BSC026N08NS5 +BOM

High-power switching solution for demanding applicatio

BSC026N08NS5 General Description

Featuring a single-element construction, this Silicon-based FET is ideal for use in various electronic circuits where fast switching speeds and low power dissipation are crucial. The Metal-Oxide Semiconductor technology ensures reliable performance and excellent thermal stability

Specifications

Source Content uid BSC026N08NS5 Part Life Cycle Code Active
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 370 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 23 A Drain-source On Resistance-Max 0.0026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F5
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 5
Operating Mode ENHANCEMENT MODE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A Surface Mount YES
Terminal Finish TIN Terminal Form FLAT
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

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