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BR25A512FJ-3MGE2 +BOM

512Kbit EEPROM with SPI interface, supporting bus speeds up to 10MHz and voltage range of 2.5-5.5V

BR25A512FJ-3MGE2 General Description

The BR25A512FJ-3MGE2 from Rohm Semiconductor is an EEPROM Memory IC designed for a wide range of applications. This 512Kbit SPI memory device operates at a clock frequency of 10 MHz and features a write cycle time of 5ms for both word and page modes. With a voltage supply ranging from 2.5V to 5.5V, this memory chip is suitable for use in various systems that require non-volatile data storage. The BR25A512FJ-3MGE2 is packaged in an 8-SOIC (0.154", 3.90mm Width) and supports surface mounting. Its compact design makes it ideal for embedded systems, consumer electronics, and industrial control devices.

ROHM Semiconductor Inventory

Key Features

  • Memory Size: 512Kbit
  • Memory Organization: 64K x 8
  • Memory Interface: SPI
  • Clock Frequency: 10 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Application

  • Industrial control systems
  • Consumer electronics
  • Embedded systems
  • Automotive applications
  • Medical devices

Specifications

Category Integrated Circuits (ICs)MemoryMemory Series -
Memory Type Non-Volatile Memory Format EEPROM
Technology EEPROM Memory Size 512Kbit
Memory Organization 64K x 8 Memory Interface SPI
Clock Frequency 10 MHz Write Cycle Time - Word, Page 5ms
Voltage - Supply 2.5V ~ 5.5V Operating Temperature -40°C ~ 105°C (TA)
Mounting Type Surface Mount Base Product Number BR25A512
Package/Case 8-SOP-J

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BR25A512FJ-3MGE2 Datasheet PDF

Preliminary Specification BR25A512FJ-3MGE2 PDF Download

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