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BLL6H1214-500 Image
BLL6H1214-500 Image

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BLL6H1214-500

In Stock: 7,921

MOSFET transistor designed for 2-channel operation

  • Manufacturers: NXP Semiconductors
  • Mfr.Part#:

    BLL6H1214-500

  • Package/Case:

    SOT-539A

  • Product Type:

    RF FETs

  • RoHS:

    rohs

  • Lifecycle:

    NRND

BLL6H1214-500 Information

Description

TRANSISTOR 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4, FET RF Power

Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1.2 GHz to 1.4 GHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
  • (RoHS)

Specifications

ECCN (US) EAR99 Part Status NRND
Automotive PPAP
Configuration Dual Common Source Channel Mode Enhancement
Channel Type N Number of Elements per Chip 2
Mode of Operation Pulsed RF Process Technology LDMOS
Maximum Drain Source Voltage (V) 100 Maximum Gate Source Voltage (V) 13
Maximum Gate Threshold Voltage (V) 2.2 Maximum VSWR 10
Maximum Continuous Drain Current (A) 45 Maximum Gate Source Leakage Current (nA) 140
Maximum IDSS (uA) 1.4 Maximum Drain Source Resistance (mOhm) [email protected]
Typical Forward Transconductance (S) 3 Output Power (W) 500(Min)
Typical Power Gain (dB) 17 Maximum Frequency (MHz) 1400
Minimum Frequency (MHz) 1200 Typical Fall Time (ns) 6
Typical Rise Time (ns) 20 Typical Drain Efficiency (%) 50
Minimum Operating Temperature (°C) -65 Maximum Operating Temperature (°C) 200
Mounting Screw PCB changed 5
Pin Count 5 Package/Case SOT-539A

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Teams: [email protected]

Tel: +852 95804164

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Shipping Information

  • Shipped From:

    HK warehouse

  • Expected Shipping Date:
    to
    (HKT)
  • Expected Quotation Date:

    (HKT)

  • Supplier Lead-Time:

    Call for availability

*Lead times apply to standard orders and are based on business days only. Please contact us for details.

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