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BLF881

In Stock: 5,697

N-channel power transistor for high-voltage DC-DC converters

Manufacturers:
Ampleon
Mfr.Part#:
BLF881
Package/Case:
LDMOST
Product Type:
RF FETs, MOSFETs

BLF881 Information

Description

BLF881 is an RF MOSFET N-CH from Ampleon, a leading semiconductor manufacturer. It is designed for high-frequency applications in wireless communication systems, such as DVB-T and other radio frequency amplification systems. This device offers enhanced performance, reliability, and efficiency due to its LDMOS process technology. The BLF881 provides a maximum operating temperature range of -65°C to 200°C, making it suitable for use in a wide range of applications.

Features

Single-channel enhancement mode N-channel MOSFET
Maximum drain-source voltage (V): 104V
Maximum gate-source voltage (V): 13V
Maximum VSWR: 10
Maximum drain-source resistance (mOhm): 210 (Typ) @ 6.15V
Typical input capacitance @ Vds (pF): 100 @ 50V
Typical reverse transfer capacitance @ Vds (pF): 1 @ 50V
Typical output capacitance @ Vds (pF): 33.5 @ 50V

Applications

Wireless communication systems for DVB-T and other applications
Radio frequency amplification systems
High-power amplifier systems

Specifications

ECCN (US)	EAR99	Part Status	Active
Configuration	Single	Channel Mode	Enhancement
Channel Type	N	Number of Elements per Chip	1
Mode of Operation	DVB-T\|2-Tone Class-AB	Process Technology	LDMOS
Maximum Drain Source Voltage (V)	104	Maximum Gate Source Voltage (V)	13
Maximum VSWR	10	Maximum Drain Source Resistance (mOhm)	210(Typ)@6.15V
Typical Input Capacitance @ Vds (pF)	100@50V	Typical Reverse Transfer Capacitance @ Vds (pF)	1@50V
Typical Output Capacitance @ Vds (pF)	33.5@50V	Output Power (W)	140(Typ)
Typical Power Gain (dB)	21	Maximum Frequency (MHz)	860
Minimum Frequency (MHz)	1	Typical Drain Efficiency (%)	49
Minimum Operating Temperature (°C)	-65	Maximum Operating Temperature (°C)	200
Mounting	Screw	PCB changed	3
Pin Count	3	Package/Case	LDMOST

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Tel: +852 95804164

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Shipped From:
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Expected Shipping Date:
to

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