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Compact and efficient design for RF amplification: BLF878 Transistor with robust performance
BLF878
The BLF878 is a high-voltage N-channel RF power MOSFET designed by NXP Semiconductors. It's part of their LDMOST (Lateral DMOS Transistor) family, known for its high reliability and efficiency. With a maximum voltage rating of 89V, this component is suitable for wireless communication systems operating at frequencies below 3 GHz. The BLF878's SOT-979A package offers a compact and robust solution for RF power amplification in applications like cellular base stations, radar systems, and satellite communications. Its performance features include high power gain, low noise figure, and good linearity, making it an excellent choice for designing high-power amplifier circuits. This introduction summarizes the key properties of the BLF878, providing a starting point for understanding its capabilities and potential uses in various electronic systems.
According to the provided information, there are no features listed for the BLF878 product. The "Features" section is left blank, indicating that NXP Semiconductors did not provide any specific feature details for this product. Therefore, I cannot provide any information on the features of the BLF878.
The package type for NXP Semiconductors' BLF878 component is SOT-979A, a Land Grid Array (LGA) package with 5 pins.
According to the product information, the BLF878 has a pin count of 5-pin and is an N-CH 89V LDMOST (laterally diffused MOS transistor) based on its description as "Trans RF MOSFET N-CH 89V 5-Pin LDMOST".
The manufacturer of the BLF878 is NXP Semiconductors, a leading global semiconductor company that provides high-performance mixed-signal solutions.
Packaging | Tray | Part Status | Obsolete |
---|---|---|---|
Technology | LDMOS | Configuration | Dual, Common Source |
Frequency | 860MHz | Gain | 21dB |
Voltage - Test | 40 V | Current - Test | 1.4 A |
Power - Output | 300W | Voltage - Rated | 89 V |
Mounting Type | Chassis Mount | Package/Case | SOT-979A |
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