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BLF861

In Stock: 7,578

TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-540A, 4 PIN, FET RF Power

BLF861 Information

Description

The BLF861 is a 2-channel UHF band transistor, specifically designed as an N-channel RF power MOSFET by Philips Semiconductors. It features a SOT-540A package with 4 pins, making it suitable for various applications that require high-frequency and high-power performance. This transistor is ideal for use in radio frequency (RF) amplifiers, transmitters, and receivers operating in the UHF band. Its MOSFET design provides excellent switching characteristics, low noise figure, and high power gain, making it a reliable choice for wireless communication systems, radar applications, and other RF-based systems. In summary, the BLF861 is a high-performance transistor designed to handle demanding RF applications, offering a unique combination of power, frequency, and reliability.

Features

Based on the information provided, the BLF861 is a transistor from Philips Semiconductors that features:

  • A 2-channel UHF band operation
  • N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) design
  • RF power capabilities
  • SOT-540A package with 4 pins

Please note that the provided information does not include detailed specifications or parameters of the BLF861 transistor.

Package

According to the product information, the package type of BLF861 is SOT-540A, which is a 4-pin package.

Manufacturer

The manufacturer of the BLF861 is Philips Semiconductors.

Applications

The BLF861 is a UHF band, N-channel MOSFET transistor suitable for RF power applications. Its typical application areas include:

  • Wireless communication systems (e.g., cellular networks, satellite communications)
  • Radio frequency amplifiers
  • Power amplifiers
  • Switching circuits
  • High-frequency switching and amplification

Specifications

Source Content uid BLF861 Part Life Cycle Code Obsolete
Pin Count 4 Reach Compliance Code
ECCN Code EAR99 Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 18 A FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code R-CDFM-F4
Number of Elements 2 Number of Terminals 4
Operating Mode ENHANCEMENT MODE Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified Surface Mount YES
Terminal Form FLAT Terminal Position DUAL
Transistor Application AMPLIFIER Transistor Element Material SILICON
Package/Case SMD

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    07/11/2024

    6

    Shipping fast and smoothly. Module good quality

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    Fast shipping from Avaq! I received the DSP2000 components earlier than expected, allowing me to proceed with my project without any delays. Kudos to Avaq's efficiency!

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    18

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    12/17/2021

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