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BLF7G22LS-130

In Stock: 7,946

S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Manufacturers:
NXP Semiconductor
Mfr.Part#:
BLF7G22LS-130
Datasheet:
BLF7G22LS-130 Datasheet (PDF)
Package/Case:
SOT502
Product Type:
RF Power Field-Effect Transistors
RoHS:
Lifecycle:
Transferred
EDA/CAD Models:
Request Free CAD Models for BLF7G22LS-130

BLF7G22LS-130 Information

Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Specifications

Source Content uid	BLF7G22LS-130	Part Life Cycle Code	Transferred
Pin Count	2	Reach Compliance Code
ECCN Code	EAR99	Case Connection	SOURCE
Configuration	SINGLE	DS Breakdown Voltage-Min	65 V
Drain Current-Max (ID)	28 A	FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	S BAND	JESD-30 Code	R-CDFP-F2
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	225 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON	Package/Case	SOT502

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Qualification

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Shipping Information

Shipped From:
HK warehouse
Expected Shipping Date:
to

(HKT)
Expected Quotation Date:
(HKT)
Supplier Lead-Time:
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*Lead times apply to standard orders and are based on business days only. Please contact us for details.

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