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BLF6G27-10G

In Stock: 4,643

RF Power Field-Effect Transistor

Manufacturers:
NXP Semiconductor
Mfr.Part#:
BLF6G27-10G
Package/Case:
SOT975C
Product Type:
RF FETs, MOSFETs
RoHS:
Lifecycle:
OBSOLETE
EDA/CAD Models:
Request Free CAD Models for BLF6G27-10G

BLF6G27-10G Information

Description

Here's a concise introduction to the NXP BLF6G27-10G: The NXP BLF6G27-10G is a high-power gallium nitride (GaN) transistor designed for RF power amplification applications. With a frequency range of 3.1-3.55 GHz, it operates in a frequency band ideal for wireless infrastructure, public safety networks, radar systems, and other communication-related applications. This transistor offers a linear gain of 27 dB, high power gain of 47 dB, and an efficiency of 69%, making it suitable for demanding RF amplification tasks. Further enhancements include integrated ESD protection and a thermal resistance of 0.75 °C/W. The SOT-975C package provides a compact solution for modern electronics designs.

Features

The BLF6G27-10G features include:

Frequency range: 3.1 - 3.55 GHz
Gain: 10 W
Linear gain: 27 dB
Efficiency: 69%
High power gain: 47 dB
Integrated ESD protection
Thermal resistance: 0.75 °C/W

These features make it suitable for applications such as wireless infrastructure, public safety networks, radar systems, satellite communication, test and measurement equipment, radio broadcasting, and aerospace and defense applications.

Package

The package type of BLF6G27-10G is SOT-975C.

Manufacturer

The manufacturer of the BLF6G27-10G is NXP. NXP is a leading semiconductor company that specializes in the design, manufacture, and marketing of semiconductors for various industries such as automotive, industrial, healthcare, and consumer electronics. The company was founded in 1953 and has its headquarters in Eindhoven, Netherlands.

Applications

According to the product information, the application areas for the BLF6G27-10G are:

Wireless infrastructure
Public safety networks
Radar systems
Satellite communication
Test and measurement equipment
Radio broadcasting
Aerospace and defense applications

Equivalent

Based on NXP's product portfolio, some equivalent products to the BLF6G27-10G high power gallium nitride transistor for RF power amplification include:

NXP's own BLF7G25-5W
Qorvo's TGF3973P4V
MACOM's MGAJ3151

Please note that equivalent products may have slightly different specifications or features, and it is recommended to consult the datasheets for each product to determine the best fit for your specific application.

Specifications

Technology	LDMOS	Frequency	2.5GHz ~ 2.7GHz
Gain	19dB	Voltage - Test	28 V
Current Rating (Amps)	3.5A	Current - Test	130 mA
Power - Output	2W	Voltage - Rated	65 V
Mounting Type	Surface Mount	Base Product Number	BLF6G27
Package/Case	SOT975C

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Returns and exchanges are supported, provided the items remain in their original condition.

Ratings and Reviews

C

C**e
11/22/2024

12

today received LED's.fast shipping.same as description.
C

C**b
09/26/2024

7

Fast shipping and quality product. Thank you.
A

A**n
08/03/2024

6

AC-DC 100 240 12V power supply module. 2A.Fast delivery.High quality power supply and good operation at an affordable price.Thanks to the seller.
J

J**h
06/07/2022

13

Impressed with Avaq's lightning-fast delivery! Ordered the RTL8139A components and they arrived in record time. Kudos to their efficient service and prompt updates.

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