This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only See technical specifications

BLF645

In Stock: 4,417

N-channel FET device for high-power RF signal processin

Manufacturers:
Ampleon
Mfr.Part#:
BLF645
Package/Case:
LDMOST
Product Type:
RF FETs, MOSFETs

BLF645 Information

Description

The BLF645 is a high-performance RF MOSFET N-CH 65V 32A transistor from Ampleon, designed for various radio frequency (RF) applications. With its unique LDMOS process technology, this device offers exceptional power handling and efficiency. The BLF645 is suitable for use in CW and 2-tone Class-AB operating modes, making it an excellent choice for amplifiers, modems, and other RF equipment. The devices are ideal for applications such as radio transmitters, radar systems, and satellite communication systems. By leveraging the benefits of LDMOS technology, the BLF645 provides a high power-to-size ratio, enabling design engineers to create compact and efficient systems.

Features

Enhancement mode N-channel FET
Dual common source configuration
Maximum drain-source voltage: 65V
Maximum gate-source voltage: 11V
Maximum VSWR: 10
Maximum continuous drain current: 32A
High power gain and efficiency

Applications

Radio transmitters
Radar systems
Satellite communication systems
Modems and other RF equipment

Specifications

ECCN (US)	EAR99	Part Status	NRND
Configuration	Dual Common Source	Channel Mode	Enhancement
Channel Type	N	Number of Elements per Chip	2
Mode of Operation	CW Class-AB\|2-Tone Class-AB	Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65	Maximum Gate Source Voltage (V)	11
Maximum VSWR	10	Maximum Continuous Drain Current (A)	32
Maximum Drain Source Resistance (mOhm)	220(Typ)@6.15V	Typical Input Capacitance @ Vds (pF)	69@32V
Typical Reverse Transfer Capacitance @ Vds (pF)	1.2@32V	Typical Output Capacitance @ Vds (pF)	25@32V
Typical Forward Transconductance (S)	6.4	Output Power (W)	100(Typ)
Typical Power Gain (dB)	18	Maximum Frequency (MHz)	1300
Minimum Frequency (MHz)	1	Typical Drain Efficiency (%)	56
Minimum Operating Temperature (°C)	-65	Maximum Operating Temperature (°C)	200
Mounting	Screw	PCB changed	5
Pin Count	5	Package/Case	LDMOST

Service Policies and Others

After-Sales & Settlement Related

Payment

Payment Method

TT/Wire Transfer

Paypal

Western Union

Money Gram

For alternative payment channels, please reach out to us at:

[email protected]

Shipping & Packing

Shipping Method

Fedex

UPS

DHL

TNT

Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

After Sales Service

Returns and exchanges are supported, provided the items remain in their original condition.

Write a Review

You need to log in to reply.

Service Support

Email: [email protected]

Teams: [email protected]

Tel: +852 95804164

Qualification

Payment Methods

Shipping Information

Shipped From:
HK warehouse
Expected Shipping Date:
to

(HKT)
Expected Quotation Date:
(HKT)
Supplier Lead-Time:
Call for availability

*Lead times apply to standard orders and are based on business days only. Please contact us for details.

Top Sellers

BLF184XR

6,529+

High-voltage transistor for RF applications, suitable fo
BLF881

5,697+

N-channel power transistor for high-voltage DC-DC converters
BLF888A

6,166+

The BLF888A is a radio frequency metal-oxide-semiconductor field-effect transistor (RF MOSFET) tailored for N-channel operation

BLC2425M9LS250

2,527+

Trans RF MOSFET N-CH 65V 3-Pin SOT1270-1
BLF188XRU

4,743+

Transistor BLF188XRU: a high-frequency
BLF8G22LS-160BV

3,853+

A high-performance LDMOS transistor solution for wireless infrastructure applications, providing exceptional reliability and efficiency