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BFR840L3RHESDE6327XTSA1

RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3

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BFR840L3RHESDE6327XTSA1 General Description

RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3

Infineon Technologies Corporation Inventory

Key Features

  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
  • High transition frequency = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 10 mA
  • High gain>>
  • Ideal for low voltage applications e.g.>
  • Low profile and small form factor leadless package
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Mfr Infineon Technologies
Series - Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 2.6V Frequency - Transition 75GHz
Noise Figure (dB Typ @ f) 0.5dB @ 450MHz Gain 27dB
Power - Max 75mW DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Package / Case SC-101, SOT-883
Supplier Device Package PG-TSLP-3 Base Product Number BFR840
RHoS yes PBFree yes
HalogenFree yes

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Our products are mainly transported and delivered by DHL, FedEx, UPS and other logistics partners on site -- Available to 200+ countries.

Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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If you have any dissatisfaction with the quality of the product you received, you can contact us for a refund or exchange, as long as the product is kept in its original condition.

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BFR840L3RHESDE6327XTSA1 Datasheet PDF

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