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See Technical Specifications

BF1205,115 +BOM

RF Mosfet 5 V 12 mA 800MHz 26dB 6-TSSOP

Manufacturer:

NXP Semiconductor
Mfr.Part #:

BF1205,115
Datasheet:

BF1205,115 Datasheet (PDF)
VDS [max] (V):

10
ID [max] (mA):

30
IDS [min] (mA):

8,8
IDS [max] (mA):

16,16
EDA/CAD Models:

Request Free CAD Models for BF1205,115

BF1205,115 Information

General Description

Product BF1205 is a dual N-Channel RF MOSFET transistor designed for applications requiring low voltage, low current, and high power. With a voltage rating of 10V, a current rating of 30mA, and a power dissipation of 200mW, this transistor offers reliable performance in various RF applications. The dual N-Channel configuration allows for versatile circuit design and implementation, making it a versatile choice for design engineers

Specifications

V<sub>DS</sub> [max] (V)	10	I<sub>D</sub> [max] (mA)	30
I<sub>DS</sub> [min] (mA)	8,8	I<sub>DS</sub> [max] (mA)	16,16
V<sub>GSth</sub> [min] (V)	0.3	V<sub>GSth</sub> [max] (V)	1
\|y<sub>fs</sub>\| [min]	26	\|y<sub>fs</sub>\| [max]	40
C<sub>iss</sub> [typ]	1.8	C<sub>oss</sub> [typ]	0.75
NF [typ] (dB)	1.2	@f (MHz)	800
VHF	Y	UHF	Y
Product Category:	RF MOSFET Transistors	Transistor Polarity:	Dual N-Channel
Technology:	Si	Id - Continuous Drain Current:	30 mA
Vds - Drain-Source Breakdown Voltage:	10 V, 10 V	Rds On - Drain-Source Resistance:	-
Mounting Style:	SMD/SMT	Packaging:	MouseReel
Configuration:	Dual	Pd - Power Dissipation:	200 mW
Product Type:	RF MOSFET Transistors	Factory Pack Quantity:	3000
Subcategory:	MOSFETs	Type:	RF Small Signal MOSFET
Vgs - Gate-Source Voltage:	10 V, 10 V	Vgs th - Gate-Source Threshold Voltage:	1 V
Unit Weight:	0.000212 oz	Package/Case	SOT-143-4